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Memory system and operating method of memory cells thereof

A technology of memory unit and memory system, which is applied in the direction of static memory, digital memory information, information storage, etc., and can solve problems such as lost data

Pending Publication Date: 2021-09-10
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Volatile memory devices can store data when powered on, but may lose stored data when powered off
Unlike volatile memory devices, nonvolatile memory devices can retain data even after power is turned off, but can be slower than volatile memory devices

Method used

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  • Memory system and operating method of memory cells thereof
  • Memory system and operating method of memory cells thereof
  • Memory system and operating method of memory cells thereof

Examples

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Embodiment Construction

[0017] The following disclosure provides many different embodiments or examples for implementing different features of the invention. Specific embodiments or examples of components and arrangements are described below to simplify the present disclosure. Of course, these are examples only and are not intended to be limiting. For example, in the following description, forming a first component over or on a second component may include an embodiment in which the first component and the second component are formed in direct contact, and may also include an embodiment in which a first component may be formed between the first component and the second component. Additional components such that the first and second components may not be in direct contact. Furthermore, the present invention may repeat reference numerals and / or letters in various examples. This repetition is for the purposes of simplicity and clarity and does not in itself indicate a relationship between the various ...

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PUM

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Abstract

The invention discloses a memory system comprising memory cells and a method and circuit for operating the memory cells. In one aspect, the circuit includes a transistor pair to electrically couple to a bit line a selected one of i) a voltage source to provide a reference voltage to the memory cells, or ii) a sensor to sense a current cell flowing through the memory. In one aspect, a circuit includes a first transistor. The first transistor and the bit line may be electrically coupled in series between the transistor pair and the memory cells.

Description

technical field [0001] Embodiments of the present invention relate to memory systems and methods of operating memory cells thereof. Background technique [0002] The development of electronic devices, such as computers, portable devices, smartphones, Internet of Things (IoT) devices, etc., has led to an increase in the demand for memory devices. In general, memory devices can be both volatile memory devices and non-volatile memory devices. Volatile memory devices can store data when powered on, but may lose the stored data when powered off. Unlike volatile memory devices, nonvolatile memory devices can retain data even after power is turned off, but can be slower than volatile memory devices. Contents of the invention [0003] According to an aspect of an embodiment of the present invention, there is provided a memory system comprising: a memory cell; and a bit line connected to the memory cell; a transistor pair for electrically coupling to the bit line a selected one o...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C11/40G11C8/14G11C7/18G11C7/06G11C5/14
CPCG11C11/40G11C7/18G11C8/14G11C7/06G11C5/147G11C16/26G11C16/24G11C16/28G11C7/12G11C16/32G11C2207/002
Inventor 曹斯钧洪照俊
Owner TAIWAN SEMICON MFG CO LTD