Contact structure for three-dimensional memory
A technology of storage structure and contact structure, which is applied in the manufacturing of electric solid-state devices, semiconductor devices, semiconductor/solid-state devices, etc., can solve the problems of high mechanical stress, reduction of effective storage capacity, increase of lateral size, etc.
Pending Publication Date: 2021-10-29
YANGTZE MEMORY TECH CO LTD
View PDF12 Cites 2 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Correspondingly, the lateral size of the ladder structure also increases, which reduces the effective storage capacity per unit area
In addition, larger stair structures introduce higher mechanical stress between the memory array region and the stair region, which may cause reliability issues within 3D NAND memory
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0039] While specific configurations and arrangements are discussed, it should be understood that this is done for illustration purposes only. Those skilled in the art will recognize that other configurations and arrangements can be used without departing from the spirit and scope of the present disclosure. It will be apparent to those skilled in the art that the present disclosure may also be employed in a variety of other applications.
[0040] It is to be noted that references in the specification to "one embodiment," "an embodiment," "example embodiments," "some embodiments," etc. indicate that the described embodiments may include a particular feature, structure, or characteristic, but Not every embodiment may include that particular feature, structure or characteristic. Furthermore, such phrases are not necessarily referring to the same embodiment. Furthermore, when a particular feature, structure or characteristic is described in connection with an embodiment, it woul...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More Abstract
Embodiments of 3D memory structures and methods for forming 3D memory structures are disclosed. The method of fabrication includes the step of arranging an alternating dielectric stack on a substrate, wherein the alternating dielectric stack has a first dielectric layer and a second dielectric layer alternately stacked on top of each other; a step of forming a plurality of contact openings in the alternating dielectric stack such that the pairs of dielectric layers may be exposed inside at least one of the plurality of contact openings; a step of forming a film stack having alternating conductive layers and dielectric layers by replacing the second dielectric layer with the conductive layers; and a step of forming a contact structure to contact the conductive layers in the film stack having alternating conductive layers and dielectric layers.
Description
[0001] This application is a divisional application of the application dated March 13, 2020, the application number is 202080000523.X, and the invention name is "contact structure for three-dimensional memory". technical field [0002] The present disclosure relates generally to the field of semiconductor technology and, more particularly, to methods for forming three-dimensional (3D) memories. Background technique [0003] As memory devices shrink to smaller die sizes to reduce fabrication costs and increase storage density, scaling of planar memory cells is challenged by process technology limitations and reliability issues. Three-dimensional (3D) memory architectures can address density and performance limitations in planar memory cells. [0004] In 3D NAND memory, a ladder structure is usually used to provide electrical contact between the word line and the control gate of the vertically stacked memory cells. However, as storage capacity in 3D NAND memory continues to i...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/768H01L23/538H01L27/1157H01L27/11582H10B43/27H10B43/35
CPCH01L21/76897H01L23/5386H10B43/27H10B43/35
Inventor 孙中旺张中周文犀刘磊夏志良
Owner YANGTZE MEMORY TECH CO LTD