Ferroelectric memory array capable of realizing multi-operand memory calculation
A ferroelectric memory and memory array technology, applied in the field of circuits, can solve problems such as high design costs
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[0027] The present invention will be further described below in conjunction with the accompanying drawings and embodiments.
[0028] Such as figure 1 , figure 2 , image 3 As shown, a ferroelectric memory array that can realize multi-operand memory calculation includes a memory array, a sensing and multi-valued computing unit, a sensing line driver, a forwarding line unit, and an address decoder. The sensing and multi-valued The computing unit is connected to the memory array, and the memory array is connected to the forwarding row unit; the address decoder is connected to the memory array, and is used to select the row or column to be operated and perform bitwise logic operation, and perform a bitwise logic operation in the sensing / multi-valued computing module Obtain the operation result; the sensing and multi-valued calculation unit is connected to the input end of the output buffer, the output end of the output buffer is connected to the first input end of the first dat...
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