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Sputter deposition source, sputter deposition apparatus, and method of powering a sputter deposition source

A technology of sputtering deposition and power supply, which is applied in the field of layer deposition, and can solve problems such as difficult handling, shielding, and time-consuming maintenance of cables

Pending Publication Date: 2021-11-16
APPLIED MATERIALS INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In addition, there may be a risk of charge accumulation in the surrounding environment of the power supply cable
[0007] Power supply cables with large diameter conductive cores suitable for carrying high currents can be stiff and therefore difficult to handle
On the other hand, if several separate power supply cables are used to supply high currents to the sputter electrodes, there may be issues regarding electromagnetic interference and shielding
Additionally, laying multiple cables is time consuming and difficult to maintain

Method used

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  • Sputter deposition source, sputter deposition apparatus, and method of powering a sputter deposition source
  • Sputter deposition source, sputter deposition apparatus, and method of powering a sputter deposition source
  • Sputter deposition source, sputter deposition apparatus, and method of powering a sputter deposition source

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Embodiment Construction

[0026] Reference will now be made in detail to various embodiments of the present disclosure, one or more examples of which are illustrated in the accompanying drawings. In the following description of the drawings, like reference numerals refer to like parts. In general, only differences with respect to individual implementations are described. Each example is provided by way of explanation of the disclosure, and not intended as a limitation. Additionally, features illustrated or described as part of one embodiment can be used on or in conjunction with other embodiments to yield still further embodiments. The description is intended to cover such modifications and variations.

[0027] figure 1 is a schematic cross-sectional view of a sputter deposition source 100 according to embodiments described herein. The sputter deposition source 100 comprises a first sputter electrode 110, optionally rotatable about an axis of rotation (A), and a power supply assembly 130 for supply...

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Abstract

A sputter deposition source (100) is described. The sputter deposition source includes a first sputter electrode (110) and a power supply assembly (130) for supplying the first sputter electrode with an electric current. The power supply assembly includes a cable (131) with a 5 plurality of insulated cores (132) surrounded by a common jacket (133). The cable may optionally further include a shielding arrangement (140). Further, a sputter deposition apparatus (200) is described, including two adjacent sputter electrodes that can be supplied with alternating currents via a cable including a plurality of insulated cores.

Description

technical field [0001] Embodiments of the present disclosure relate to layer deposition, in particular layer deposition by sputtering such as DC sputtering, MF sputtering or RF sputtering. In particular, embodiments relate to sputter deposition sources and sputter deposition apparatus for depositing layers by sputtering. Embodiments of the present disclosure relate in particular to sputter deposition sources, sputter deposition apparatus, and methods of powering sputter deposition sources. Background technique [0002] Several methods are known for depositing materials on substrates. For example, the substrate may be coated by a physical vapor deposition (PVD) process such as sputtering, a chemical vapor deposition (CVD) process, a plasma enhanced chemical vapor deposition (PECVD) process. Typically, the process is performed in a deposition apparatus comprising a vacuum chamber in which the substrate to be coated is located. A deposition material is provided in the device...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01J37/32H01J37/34
CPCH01J37/32577H01J37/3444H01J37/3438H01B11/1033
Inventor 约阿希姆·松嫩申威利·绍尔丹尼尔·谢弗-科皮托托拜西·伯格曼
Owner APPLIED MATERIALS INC