Memory device and method of forming the same

Abstract

A memory device and method of forming the same are provided. The memory device includes a word line, a bit line, a source line, a channel pillar, and a charge storage structure. The bit line and the source line are disposed on opposite sides of the word line in a vertical direction. The channel pillar penetrates through and is connected to the word line, the bit line and the source line. The charge storage structure surrounds a top surface and a bottom surface of the word line and is laterally sandwiched between the channel pillar and the word line. The channel pillar completely penetrates through and is laterally surrounded by the bit line.

Description

technical field [0001] The present invention relates to a memory element and its manufacturing method. Background technique [0002] As technology advances with each passing day, advances in electronic components have increased the need for greater storage capacity. In order to meet the requirement of high storage density, the size of memory elements becomes smaller and higher in density. Therefore, the type of memory device has been developed from a 2D memory device with a planar gate structure to a 3D memory device with a vertical channel (VC) structure. However, 3D memory elements with vertical channel structures still face many challenges. Contents of the invention [0003] Embodiments of the present invention provide a memory element and a manufacturing method thereof. The method can increase the number of vertically stacked memory cells formed in a unit area, so as to effectively use the area of ​​the substrate and increase the density of the memory cells. [0004...

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Problems solved by technology

However, 3D memory elements with vertical channel structures still face many challenges

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