Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Wire structure and forming method thereof

A technology of wires and circuit layers, applied in the field of wire structure and its formation, can solve the problems of not enough to accommodate the conductive material 30, difficult to control the conductive material 30, etc.

Pending Publication Date: 2022-01-28
ADVANCED SEMICON ENG INC
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, since the conductive material 30 is pre-filled in the groove 18, it is difficult to control the amount of the conductive material 30, so when the bump connector 12 of the fan-out layer 10 is engaged with the groove 18, the space of the groove 18 may be insufficient. To accommodate the conductive material 30, causing the conductive material 3 to overflow the groove 18 to cause a bridging short circuit 29 between adjacent bump connectors 12, such as Figure 1C shown

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Wire structure and forming method thereof
  • Wire structure and forming method thereof
  • Wire structure and forming method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0035] The following disclosure provides many different embodiments or examples for implementing different features of the presented subject matter. Specific examples of components and arrangements are described below to simplify the present disclosure. Of course these are merely examples and are not intended to limit the invention. For example, in the following description, forming a first component over or on a second component may include embodiments in which the first component and the second component are in direct contact, or may include forming an additional component between the first component and the second component An embodiment such that the first part and the second part may not be in direct contact. Also, the present invention may repeat reference numerals and / or letters in various instances. This repetition is for brevity and clarity only and does not in itself indicate a relationship between the various embodiments and / or configurations discussed.

[0036] ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a wire structure and a forming method thereof. The wire structure includes a substrate having a pad at an upper surface of the substrate; and a circuit layer; the circuit layer is located above the substrate, the circuit layer is provided with a convex block connecting piece, and the convex block connecting piece is electrically connected to the bonding pad of the substrate; wherein theconvex connecting piece comprises a first part and a second part located below the first part, and the width of the second part is larger than that of the first part.

Description

technical field [0001] The present invention relates to the technical field of semiconductors, and more specifically, to a wire structure and a forming method thereof. Background technique [0002] In the fan-out substrate (FOSUB) structure including the fan-out layer (Fan-out layer) and the substrate (Substrate), such as Figure 1A As shown, when the fan-out layer 10 is bonded to the substrate 20, the bump 12 of the fan-out layer 10 may be caused by the warpage of the substrate 20 and the fan-out layer 10 during annealing. It cannot completely contact the pad 22 of the substrate 20 . Therefore, there is a problem that the bump connectors 12 of the fan-out layer 10 are not electrically connected to the pads 22 of the substrate 20 . For example, in Figure 1A In , the bump connection 12 in the area S1 is in contact with the pad 22 , while the bump connection 12 in the area S2 is not in contact with the pad 22 . [0003] In another existing structure like Figure 1B As show...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L23/498H01L21/48
CPCH01L23/49822H01L23/49827H01L23/49811H01L21/4857H01L21/486H01L21/4853
Inventor 连宏德张皇贤
Owner ADVANCED SEMICON ENG INC
Features
  • Generate Ideas
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More