Manufacturing method of semiconductor structure

Abstract

The invention provides a semiconductor structure and a manufacturing method thereof. In one embodiment, the semiconductor structure includes a source feature and a drain feature, a channel structure disposed between the source feature and the drain feature, a semiconductor layer disposed on the channel structure and the drain feature, a dielectric layer disposed on the semiconductor layer, a backside source contact disposed on the source feature and extending through the semiconductor layer and the dielectric layer, and a backside power rail disposed on the dielectric layer and in contact with the backside source contact.

Description

technical field [0001] The embodiments of the present invention relate to a semiconductor technology, and in particular to a semiconductor structure and a manufacturing method thereof. Background technique [0002] The semiconductor integrated circuit (IC) industry has experienced exponential growth. Technological advances in integrated circuit (IC) materials and design have produced multiple generations of integrated circuits (ICs), each with smaller and more complex circuits than the previous generation. During the evolution of integrated circuits (ICs), functional density (i.e., the number of interconnected devices per chip area) has generally increased, while geometry size (i.e., the smallest component (or line) that can be formed using a manufacturing process) has decreased. for zoom out. Such miniaturization processes generally bring benefits by increasing production efficiency and reducing associated costs. The aforementioned scaling also increases the complexity o...

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Problems solved by technology

Thus, while conventional backside power rail formation processes generally serve their intended purpose, they are not satisfactory in all respects

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