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Manufacturing method of light-emitting diode chip

A technology of light-emitting diodes and manufacturing methods, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., and can solve the problems that the size of light-emitting diode chips is difficult to further reduce.

Pending Publication Date: 2022-02-11
CHONGQING KONKA PHOTOELECTRIC TECH RES INST CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] In view of the deficiencies in the prior art above, the purpose of this application is to provide a method for manufacturing light-emitting diode chips, aiming at solving the problem that the manufacturing size of light-emitting diode chips is difficult to further reduce

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  • Manufacturing method of light-emitting diode chip
  • Manufacturing method of light-emitting diode chip
  • Manufacturing method of light-emitting diode chip

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Embodiment Construction

[0049] In order to facilitate understanding of the present application, the present application will be further described below with reference to the related drawings. The preferred embodiment of the present application is given. However, the present application can be implemented in many different forms, is not limited to the embodiments described herein. Conversely, the purpose of providing these embodiments is to make it more thoroughly comprehensively understood the disclosure of the present application.

[0050] All technical and scientific terms used herein are commonly understood by those skilled in the art, unless otherwise defined. The terms used herein in the specification of the present disclosure are intended to describe specific embodiments, and is not intended to limit the present application.

[0051] Existing programs describe most of the current light-emitting diode chips that use flip-in LED process flows, and traditional processes are as follows: MESA-ISO-ITO-PV...

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Abstract

The invention relates to a manufacturing method of a light-emitting diode chip. The manufacturing method comprises the following steps: providing a substrate; forming an epitaxial layer on the substrate, wherein the epitaxial layer is provided with an etching channel, and the etching channel extends to the substrate from the surface, away from the substrate, of the epitaxial layer; forming a protection layer on the outer surface of the epitaxial layer and the bottom of the etching channel; forming a filling layer in the etching channel; forming a photoresist layer with a pattern on the surfaces, far away from the substrate, of the protection layer and the filling layer; removing a part of the protection layer based on the pattern of the photoresist layer to form a first electrode groove and a second electrode groove; and arranging a first electrode electrically connected with the epitaxial layer in the first electrode groove, and arranging a second electrode electrically connected with the epitaxial layer in the second electrode groove. The filling layer is arranged in the etching channel, so that the photoresist layer formed on the filling layer and the protection layer on the epitaxial layer can be thinner, and the manufacturing size of the light-emitting diode chip can be smaller.

Description

Technical field [0001] The present invention relates to the field of display, and more particularly to a light emitting diode chip manufacturing method. Background technique [0002] The application of the light-emitting diode chip is more and more, the light-emitting diode chip has a very good industrial foundation, and the light-emitting diode chip can be applied to the fields of Ar, VR, TV, watch and other fields. [0003] Most of the current light-emitting diode chips are inverted LED process flows, and traditional processes are as follows: MESA-ISO-ITO-PV-PAD. The size of the smallest light-emitting diode chip can do in the current industry at 15 um * 30um. After ISO etching in the flip process, the ISO depth is deep, probably 4-7 um, in the process of subsequent light-emitting diode chips (for example, PVPAD) It is necessary to do a thicker photoresist layer, and the thickness of the photoresist layer is low, and the photolithography is difficult to control accuracy, furthe...

Claims

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Application Information

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IPC IPC(8): H01L33/38H01L33/44H01L33/54H01L33/56
CPCH01L33/38H01L33/54H01L33/56H01L33/44H01L2933/005H01L2933/0016
Inventor 戴广超马非凡曹进张雪梅王子川
Owner CHONGQING KONKA PHOTOELECTRIC TECH RES INST CO LTD