Semiconductor device and semiconductor package
A technology for semiconductors and devices, which is applied in the field of semiconductor devices and semiconductor packages, and can solve problems such as the deterioration of the operating properties of semiconductor devices
Pending Publication Date: 2022-02-18
SAMSUNG ELECTRONICS CO LTD
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- Abstract
- Description
- Claims
- Application Information
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Problems solved by technology
However, such downsizing may lead to deterioration of the operational properties of semiconductor devices
Method used
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[0030] Embodiments of the inventive concept will be described more fully hereinafter with reference to the accompanying drawings. In the entire drawings, the same reference numerals can refer to the same elements.
[0031] The term "first", "second", "third", and the like are used herein to distinguish from the other element, and the components are not limited by these terms. Thus, "first" elements in one embodiment can be described as "second" element in another embodiment.
[0032] The description of the features or aspects of each embodiment will generally be considered to be used in other similar features or aspects in other embodiments, unless the context further explicitly indicates.
[0033] As used herein, the singular form "one", "one", and "one" and "") are also intended to include multiple forms unless the context further clearly indicates.
[0034] When two components or directions are described herein as substantially parallel or perpendicular to each other, as unders...
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Abstract
A semiconductor device and a semiconductor package are provided. The semiconductor device includes a semiconductor substrate having a first surface and a second surface, which are opposite to each other, an active pattern protruding from the first surface of the semiconductor substrate, the active pattern including a source / drain region, a power rail electrically connected to the source / drain region, a power delivery network disposed on the second surface of the semiconductor substrate, and a penetration via structure penetrating the semiconductor substrate and electrically connected to the power rail and the power delivery network. The penetration via structure includes a first conductive pattern electrically connected to the power rail and a second conductive pattern electrically connected to the power delivery network. The first conductive pattern includes a material different from the second conductive pattern.
Description
[0001] Cross-reference related application [0002] This patent application claims priority to Korean Patent Application No. 10-2020-0096758 submitted in Korea Intellectual Property Office on August 3, 2020, which is incorporated herein by reference. Technical field [0003] Embodiments of the present disclosure relate to semiconductor devices and semiconductor packages, and more particularly to semiconductor devices and semiconductor package including penetrating path structures penetrating the semiconductor substrate. Background technique [0004] The semiconductor device can include an integrated circuit including a plurality of metal oxide semiconductor field effect transistors (MOSFETs). In order to meet the growing demand for semiconductor devices with small pattern size and simplify design rules (Reduced Design Rule), the size of MOSFET is actively reduced. However, such dimensional reduction may result in deterioration of the operation properties of the semiconductor devic...
Claims
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IPC IPC(8): H01L23/48H01L23/528
CPCH01L23/481H01L23/5283H01L23/5286H01L25/0652H01L25/0655H01L25/0657H01L2225/06513H01L2225/06517H01L2225/06544H01L2225/06548H01L23/535H01L23/485H01L21/76898H01L21/76895H01L21/76846H01L2224/08145H01L2224/13025H01L2224/14181H01L2224/0401H01L2224/13023H01L2224/05568H01L24/16H01L24/08H01L2224/32225H01L2224/48227H01L2224/16145H01L2224/16227H01L2224/0557H01L2224/08146H01L2224/09181H01L2224/73251H01L2224/08H01L2224/48H01L2224/32H01L23/49827H01L23/528H01L23/4827H01L23/5386H01L23/49838H01L23/5384H01L23/5226H01L23/53209H01L2224/16146H01L2224/16147H01L2224/16237H01L2224/08147H01L2924/1431H01L2924/1434H01L23/49816
Inventor 徐柱斌文光辰朴建相朴明珠朴秀晶黄载元
Owner SAMSUNG ELECTRONICS CO LTD