Semiconductor structure and preparation method thereof

A technology of semiconductor and wet processing, which is applied in the manufacture of semiconductor/solid-state devices, semiconductor devices, semiconductor/solid-state device components, etc. It can solve the problems of Cu metal reducing the electrical properties of devices, so as to avoid the impact of electrical properties and achieve good insulation effect of effect

Pending Publication Date: 2022-03-04
SJ SEMICON JIANGYIN CORP
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] In view of the shortcomings of the prior art described above, the object of the present invention is to provide a semiconductor structure and its preparation m

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor structure and preparation method thereof
  • Semiconductor structure and preparation method thereof
  • Semiconductor structure and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0039] The embodiments of the present invention will be described below with reference to the specific examples of the present invention, and those skilled in the art can easily understand other advantages and efficacy of the present invention. The present invention can also be implemented or applied by other embodiments, and various details in this specification may also be based on different viewpoints and applications without departing from the spirit of the invention.

[0040] As described in detail the embodiments of the present invention, in order to facilitate explanation, the cross-sectional view indicating the device structure is not in general ratio, and the schematic view is merely an example, which is not to limit the scope of the invention. In addition, the three-dimensional spatial dimensions of length, width, and depth should be included in the actual production.

[0041] For convenience, it is possible to use a space relationship word such as "under", "below", "low...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

According to the semiconductor structure and the preparation method thereof provided by the invention, after planarization, the Si substrate is etched through a dry method, so that the first height difference exists between the Si substrate and the insulating layer, residual Cu metal near the edge of the Cu column can be effectively removed through wet processing, the second height difference exists between the Cu column and the insulating layer, and the first height difference is greater than the second height difference; therefore, connection of Cu metal on the inner side and the outer side of the insulating layer can be avoided, and influence on the electrical performance of the device is effectively avoided. Furthermore, through the passivation layer, the Si substrate can be effectively covered, and a conductive channel is prevented from being formed on the Si substrate in a subsequent process, so that a good insulation effect is achieved, and the influence on the electrical performance of the device can be further avoided.

Description

technical field [0001] The invention belongs to the field of semiconductor manufacturing, and relates to a semiconductor structure and a preparation method thereof. Background technique [0002] As the functions of integrated circuits become stronger and their performance and integration become higher and higher, packaging technology plays an increasingly important role in integrated circuit products, accounting for an increasing proportion of the value of the entire electronic system. Big. Due to the advantages of miniaturization, low cost, high integration, better performance and higher energy efficiency, wafer-level packaging (WLP) technology has become an important part of electronic equipment such as demanding mobile / wireless networks. The packaging method is one of the most promising packaging technologies at present. [0003] The redistribution layer (RDL) can re-layout the position of the pads of the chip, and arrange the new pads in an array. Therefore, the RDL is...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L21/768H01L23/528
CPCH01L21/76877H01L21/76883H01L23/5283
Inventor 尹佳山周祖源薛兴涛林正忠
Owner SJ SEMICON JIANGYIN CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap