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Photomask with protection structure and preparation method thereof

A technology for protecting structures and photomasks, which is applied in the photoengraving process, optics, and originals for photomechanical processing of the pattern surface. Process cost, improved stability, and the effect of eliminating atomization problems

Pending Publication Date: 2022-03-22
SHANGHAI CHUANXIN SEMICON CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] For this reason, the object of the present invention is to provide a kind of photomask with protective structure and preparation method thereof, be used to solve the problem that the protective film of photomask in the prior art is easy to fog on the photomask surface during use question

Method used

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  • Photomask with protection structure and preparation method thereof
  • Photomask with protection structure and preparation method thereof
  • Photomask with protection structure and preparation method thereof

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Embodiment Construction

[0026] Embodiments of the present invention are described below through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific implementation modes, and various modifications or changes can be made to the details in this specification based on different viewpoints and applications without departing from the spirit of the present invention.

[0027] For example, when describing the embodiments of the present invention in detail, for the convenience of explanation, the cross-sectional view showing the device structure will not be partially enlarged according to the general scale, and the schematic diagram is only an example, which should not limit the protection scope of the present invention. In addition, the three-dimensional space dimensions of length, width and depth sho...

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Abstract

The invention provides a photomask with a protection structure and a preparation method thereof, and the preparation method comprises the steps: providing a first light-transmitting substrate, and etching a recessed pattern groove in the surface of the first light-transmitting substrate; forming a pattern mask layer in the pattern groove of the first light-transmitting substrate; providing a second light-transmitting substrate; the first light-transmitting substrate and the second light-transmitting substrate are bonded, and the pattern groove and the second light-transmitting substrate are matched to form a sealing cavity so as to seal the pattern mask layer. According to the invention, the problem of photomask atomization can be effectively controlled, the pattern mask layer can be always kept clean, and the pattern mask layer is always isolated from the external environment, so that the atomization problem can be controlled, regular cleaning is not needed, and the equipment cost and the process cost are greatly saved.

Description

technical field [0001] The invention belongs to the field of semiconductor manufacturing, in particular to a photomask with a protective structure and a preparation method thereof. Background technique [0002] With the continuous improvement of integrated circuit manufacturing methods and the continuous reduction of line width in lithography technology, the area of ​​semiconductor devices is becoming smaller and smaller. The layout of semiconductors has evolved from ordinary single-function separation devices to integrated high-density multi-functional From the initial IC (integrated circuit) to LSI (large-scale integrated circuit), VLSI (very large-scale integrated circuit), until today's ULSI (ultra-large-scale integrated circuit), the area of ​​the device is further reduced. Considering the complexity of process research and development, long-term and high cost and other unfavorable factors, how to further increase the integration density of devices on the basis of the c...

Claims

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Application Information

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IPC IPC(8): G03F1/00G03F1/68
CPCG03F1/00G03F1/68
Inventor 季明华任新平黄早红
Owner SHANGHAI CHUANXIN SEMICON CO LTD
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