Dynamic process control in semiconductor fabrication

Abstract

Methods and systems for dynamic process control in substrate processing, such as in semiconductor manufacturing applications, are provided. Some example systems and methods are provided for advanced monitoring and machine learning in atomic layer deposition (ALD) processes. Some examples also relate to dynamic process control and monitoring for chamber parameter matching and gas line fill time.

Description

[0001] Cross References to Related Applications [0002] This patent application claims priority to U.S. Provisional Patent Application Serial No. 62 / 885,667, filed August 12, 2019, by Kumar et al., entitled "Dynamic Process Control In Semiconductor Manufacturing," the entire disclosure of which is incorporated by reference at this. technical field [0003] The present disclosure relates generally to dynamic process control in substrate processing and, in some examples, to systems and methods for advanced monitoring and machine learning in atomic layer deposition (ALD) processes. Some examples also involve dynamic process control and monitoring of chamber matching and gas line fill times. Background technique [0004] Currently, many, if not most, parameters associated with substrate processing chambers are monitored to operate around component set points. For example, mass flow controller (MFC) flow or chamber pressure may include a certain margin of error. Typically, th...

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Problems solved by technology

[0005] Typically, however, current process monitoring methods are only suitable for detecting relatively widespread or severe failures of process chambers or their components

This coarse detection may be acceptable in steady-state or single-step situations, such as in chemical vapor deposition (CVD) or plasma-enhanced chemical vapor deposition (PECVD) ALD that changes within milliseconds) is of limited use or application

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