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SPAD type photodiode

A technology of photodiodes and gates, applied in circuits, electrical components, semiconductor devices, etc., can solve problems such as SPAD error detection

Pending Publication Date: 2022-03-29
COMMISSARIAT A LENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In particular, SPADs are known to experience false detections

Method used

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  • SPAD type photodiode
  • SPAD type photodiode
  • SPAD type photodiode

Examples

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Embodiment Construction

[0048] In the various drawings, like features are designated by like references. In particular, common structural and / or functional features may have the same references and may arrange the same structural, dimension and material properties among the various embodiments. Furthermore, the various drawings are not drawn to scale.

[0049] For the sake of clarity, only those steps and elements that are useful for understanding the embodiments described herein have been shown and described in detail. In particular, a SPAD photodiode usually includes secondary circuitry, in particular a circuit for biasing its PN junction to a voltage greater than its avalanche threshold, and a quenching circuit with the function of interrupting the avalanche of the photodiode once it is triggered . Such secondary circuits are not shown in the drawings and will not be described in detail, the described embodiments being compatible with secondary circuits equipped with known SPAD photodiodes.

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Abstract

The present specification relates to a photodiode (200) of SPAD type comprising a depletion region in a first portion of a semiconductor substrate (101) of a first conductivity type, and further comprising a gate (201) electrically insulated from the substrate, extending from an upper surface of the substrate to the substrate, and separating the first portion from a second portion (205) of the substrate. The photodiode also includes a first region (206) of the second conductivity type extending from the upper surface of the substrate into the second portion.

Description

[0001] related application [0002] This patent application claims priority from French patent application FR20 / 09721, which is to be considered as forming an integral part of this specification. technical field [0003] The present application relates to the field of avalanche photodiodes for detecting single photons, also known as single photon avalanche diodes ("Single Photon Avalanche Diode, SPAD") photodiodes. Background technique [0004] A SPAD photodiode is essentially formed by a PN junction reverse biased at a voltage greater than its avalanche threshold. When there is no charge present in the depletion region or space charge region of the PN junction, the photodiode is in a non-conducting pseudo-stable state. When photogenerated electric charge is injected into the depletion region, the photodiode is capable of avalanche if the displacement velocity of the charge in the depletion region is high enough, ie if the electric field in the depletion region is strong en...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/107H01L31/0352H01L31/18
CPCH01L31/107H01L31/035272H01L31/18H01L31/1075H01L31/02027H01L31/022408H01L31/0352
Inventor 弗朗索瓦·阿耶尔奥利维尔·萨克斯奥德诺伯特·穆西
Owner COMMISSARIAT A LENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES