Device with reduced absorption and method for manufacturing a device

Abstract

The invention relates to a component (10), comprising a carrier (1), a semiconductor body (2) arranged on the carrier, said semiconductor body having a first semiconductor layer (21), a second semiconductor layer (22) and an active region (23), an intermediate layer (3, 31, 32) arranged at least in some regions between the carrier and the semiconductor body, and a first contact structure (41), the active region is arranged in the vertical direction between the semiconductor layers (21, 22) and is designed to generate electromagnetic radiation. According to the invention, the active region has a locally deactivated region (23D, 23E) in the lateral direction, which region is not designed to generate electromagnetic radiation. The semiconductor body has an opening (2R) which extends through the second semiconductor layer and the active region towards the first semiconductor layer, where the opening is different from a deactivated region of the active region and is partially filled with the material of the intermediate layer. Furthermore, the first contact structure is designed to electrically contact the first semiconductor layer and overlaps the opening in a top view. The invention further relates to a method for producing such a component.

Description

technical field [0001] A device with reduced absorption and thus increased efficiency is proposed. Furthermore, a method for producing a device is proposed. Background technique [0002] The efficiency of light-emitting devices depends largely on possible absorption losses. Absorption losses occur, for example, within the light-emitting semiconductor body or at metallic contacts of the component. [0003] In order to reduce absorption losses at the electrical contacts, the contacts can be coated with a radiation-reflecting material, such as silver, or formed from a transparent, electrically conductive material. Furthermore, contacts made of silver or transparent conductive materials sometimes do not have the required electrical conductivity. [0004] In order to reduce absorption losses within the semiconductor body, the semiconductor body can nevertheless be designed with respect to its layer thickness and / or material selection in such a way that absorption losses are mi...

AI Technical Summary

Problems solved by technology

However, the efficiency of the device in terms of light generation can be negatively influenced by reducing the layer thickness or by a specific material selection of the semiconductor body

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