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Semiconductor device with improved junction termination extension region

A semiconductor and junction terminal expansion technology, applied in semiconductor devices, electrical components, circuits, etc., to solve problems such as the impact of device breakdown voltage

Pending Publication Date: 2022-04-05
NEXPERIA BV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Slight variations in the definition of these rings, e.g. due to lithography tolerances, have a severe impact on the breakdown voltage of the device

Method used

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  • Semiconductor device with improved junction termination extension region
  • Semiconductor device with improved junction termination extension region
  • Semiconductor device with improved junction termination extension region

Examples

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Embodiment Construction

[0039] Reference will now be made to the accompanying drawings. It should be noted that the same reference numerals may be used to designate the same or similar components.

[0040] Figure 2A A possible top view of a portion of a semiconductor device 20 is shown, wherein the JTE region 4 is shown in detail. Semiconductor device 20 may be, for example, a silicon carbide MPS diode.

[0041] The JTE region 4 surrounding the active region present under the front metal 2 has the first charge type and comprises a plurality of field releasing sub-regions 5a-5d.

[0042] A plurality of field releasing elements 6a-6c are respectively arranged in the field releasing sub-regions 5a-5c of the first group. Each of the plurality of field release elements 6a-6c has a second charge type, and at Figure 2A is shown as having a rectangular shape.

[0043] Furthermore, a field-releasing ring 6d is provided inside the field-releasing sub-region 5d of the second group. Similar to field rele...

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PUM

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Abstract

The invention relates to a semiconductor device with an improved junction termination extension region. In particular, the invention relates to a diode with such an improved junction termination extension. A semiconductor device according to the present invention includes an active region extending in a first direction, and a junction termination extension (JTE) region of a first charge type surrounding the active region, in which the JTE region includes a plurality of field release sub-regions, each surrounding the active region and spaced apart from each other in a direction perpendicular to an outer periphery of the active region. According to the present invention, the plurality of field release sub-regions include a first group of field release sub-regions in which a plurality of field release elements of a second charge type are provided for each field release sub-region of the first group, the field release elements being spaced apart from each other in the outer circumferential direction with respect to the active region.

Description

technical field [0001] The present invention relates to a semiconductor device having an improved junction termination extension. The invention particularly relates to diodes having such improved junction termination extensions. Background technique [0002] Wide bandgap materials such as silicon carbide (SiC) and gallium nitride (GaN) have been used to realize semiconductor devices operating at high voltages. Due to their large bandgap, these material systems possess high critical electric fields, allowing them to operate at higher voltages without suffering breakdown phenomena such as avalanche breakdown. [0003] However, despite the high theoretical breakdown voltage, actual devices exhibit breakdown voltages that can be significantly lower than those based on the critical electric field. These deviations can be attributed to field crowding at the edge of the device. [0004] Various solutions are known to mitigate the effects associated with field congestion. Figure...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/06H01L29/872H01L29/861
CPCH01L29/872H01L29/0619H01L29/0692H01L29/1608H01L29/2003H01L29/0615H01L29/8611H01L29/20H01L29/868H01L29/0623H01L29/16
Inventor 罗曼·埃斯特韦蒂姆·波特
Owner NEXPERIA BV
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