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High-frequency device

A high-frequency, substrate technology, applied in semiconductor/solid-state device components, semiconductor devices, electrical components, etc., can solve problems such as signal transmission blocking

Pending Publication Date: 2022-04-29
INNOLUX CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

When high-frequency devices are placed indoors, signal transmission may be severely blocked

Method used

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  • High-frequency device
  • High-frequency device
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Embodiment Construction

[0013] The content of the present disclosure will be described in detail below in conjunction with specific embodiments and accompanying drawings. In order to make the content of the present disclosure clearer and easier to understand, each of the following drawings may be a simplified schematic diagram, and the components therein may not be drawn to scale. Moreover, the number and size of each element in the drawings are only for illustration, and are not intended to limit the scope of the present disclosure.

[0014] Certain terms will be used throughout the specification and appended claims of this disclosure to refer to particular elements. Those skilled in the art should understand that manufacturers of electronic equipment may refer to the same components with different names, and this document does not intend to distinguish those components with the same function but different names. When the terms "comprising", "comprising" and / or "having" are used in this specificatio...

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Abstract

A high-frequency device comprises a first substrate, a second substrate, a first electrode, a second electrode, frame glue and a dielectric layer. The second substrate is arranged opposite to the first substrate, the first electrode is arranged on one side face, adjacent to the second substrate, of the first substrate, the second electrode is arranged on one side face, adjacent to the first substrate, of the second substrate, the frame glue is arranged between the first substrate and the second substrate, and the dielectric layer is clamped between the first substrate and the second substrate through the frame glue. Wherein the dielectric layer comprises gas or vacuum.

Description

technical field [0001] The present disclosure relates to a high-frequency device, in particular to a high-frequency device with gas or vacuum as a dielectric layer. Background technique [0002] With the evolution of high-frequency devices, the fifth generation wireless communication system (5th generation wireless system, 5G) is a new generation of communication technology. When high-frequency devices are placed indoors, signal transmission may be severely blocked. Therefore, designing high-frequency devices as signal boosters has become one of the current research projects, such as adding (transparent) antenna functions to windows as signal boosters and other applications. Contents of the invention [0003] A high-frequency device disclosed in the present disclosure includes a first substrate, a second substrate, a first electrode, a second electrode, a sealant, and a dielectric layer. The second substrate is arranged relative to the first substrate, the first electrod...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/66
CPCH01L23/66H01Q1/38H01L23/485H01L23/3142H01L2224/023H01L24/05H01L2223/6677H01L23/3121
Inventor 纪仁海
Owner INNOLUX CORP