Near-infrared light-emitting material, preparation method thereof and LED light-emitting device

A luminescent material and near-infrared technology, used in luminescent materials, chemical instruments and methods, semiconductor devices, etc., can solve the problems of small spectral coverage, narrow half-peak width, low luminous intensity, etc., and achieve large spectral coverage and half-peak. Wide, high luminous intensity effect

Active Publication Date: 2022-05-06
XUYU OPTOELECTRONICSSHENZHEN CO LTD
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  • Abstract
  • Description
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  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of this application is to provide a near-infrared luminescent material and its preparation method, as well as an LED light-emitting device, aiming to solve the problems of low luminous intensity, narrow half-width, and spectral coverage of near-infrared luminescent materials to a certain extent. minor problem

Method used

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  • Near-infrared light-emitting material, preparation method thereof and LED light-emitting device
  • Near-infrared light-emitting material, preparation method thereof and LED light-emitting device
  • Near-infrared light-emitting material, preparation method thereof and LED light-emitting device

Examples

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preparation example Construction

[0049] The second aspect of the embodiment of the present application provides a method for preparing a near-infrared luminescent material, comprising the following steps:

[0050] S10. According to the chemical formula M x L y o 2 :R z The metering ratio obtains the compound raw materials of each element, and mixes them to obtain a raw material mixture; wherein, M is selected from at least one of Li, Na, and K; L is selected from Ga, In, Sc, Al, Y, Lu, and B At least one of R; R is selected from at least one of Cr, Yb, Mn, Er; 0

[0051] S20. Sintering the raw material mixture, and post-processing to obtain a near-infrared luminescent material.

[0052] The preparation method of the near-infrared luminescent material provided in the second aspect of the embodiment of the present application, according to the chemical formula M x L y o 2 :R z The metering ratio is used to obtain the compound raw materials of each element, and the mixing t...

Embodiment 1

[0063] A near-infrared luminescent material with the chemical formula LiSc 0.97 o 2 :0.03Cr 3+ , its preparation includes the steps of:

[0064] According to the chemical formula LiSc 0.97 o 2 :0.03Cr 3+ The stoichiometric ratio, accurate weighing of Li 2 CO 3 、Sc 2 o 3 、Cr 2 o 3 The raw materials are placed in the agate grinder, and after grinding for 30 minutes, they are all transferred into an alumina crucible, sintered at 980°C for 7 hours in the air atmosphere of a high-temperature furnace, and cooled to room temperature with the furnace. , to obtain near-infrared luminescent materials.

[0065] A kind of LED light-emitting device, its preparation comprises the steps: After mixing the near-infrared light-emitting material prepared in Example 1 with the special A / B adhesive for LED packaging in proportion, packaging it on a 455nm blue light chip and drying it (due to the current commercially available The chip does not have 467nm, but has 455nm, and the near-in...

Embodiment 2

[0067] A near-infrared luminescent material with a chemical formula of LiIn 0.99 o 2 :0.01Cr 3+ , its preparation includes the steps of:

[0068] According to the chemical formula LiIn 0.99 o 2 :0.01Cr 3+ The stoichiometric ratio, accurate weighing of Li 2 CO 3 、In 2 o 3 、Cr 2 o 3 The raw materials are placed in the agate grinder, and after grinding for 30 minutes, they are all transferred into an alumina crucible, sintered at 1130°C for 7 hours in the air atmosphere of a high-temperature furnace, and cooled to room temperature with the furnace. , to obtain near-infrared luminescent materials.

[0069] An LED light-emitting device, the preparation of which comprises the steps of: mixing the near-infrared light-emitting material prepared in Example 2 with the special A / B glue for LED packaging in proportion, packaging it on a 455nm blue light chip and drying it to obtain an LED light-emitting device.

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Abstract

The invention belongs to the technical field of light-emitting materials, and particularly relates to a near-infrared light-emitting material, a preparation method thereof and an LED light-emitting device. Wherein the near-infrared light-emitting material comprises an inorganic compound with the chemical formula of MxLyO2: Rz, and M is selected from at least one of Li, Na and K; l is selected from at least one of Ga, In, Sc, Al, Y, Lu and B; r is selected from at least one of Cr, Yb, Mn and Er; 0 < x < = 1.1, 0 < y < = 1.1, and 0.00001 < = z < = 0.2. The near-infrared light-emitting material provided by the invention can be effectively excited by blue light or red light and presents broadband near-infrared light emission, the peak wavelength of an emission spectrum is continuously adjustable in a range of 795-845nm, the light-emitting intensity is high, the half-peak width is relatively wide, the spectrum coverage range is relatively large, and more choices are provided for the types of existing near-infrared light-emitting materials.

Description

technical field [0001] The application belongs to the technical field of luminescent materials, and in particular relates to a near-infrared luminescent material and a preparation method thereof, and an LED luminescent device. Background technique [0002] In recent years, near-infrared LEDs have been considered as an important auxiliary light source in the field of near-infrared spectroscopy technology due to their simple structure and relatively low manufacturing cost. Near-infrared LEDs are near-infrared light-emitting semiconductors, which can effectively convert electrical energy into near-infrared light. They have the advantages of small size, fast response, simple structure, and stable light quality. They are widely used in remote control telemetry, optical switches, and target tracking systems. At present, near-infrared LED technology is mainly used in the fields of communication, security monitoring and sensing. The most common application band is 850-940nm. This ba...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K11/78
CPCC09K11/7701C09K11/681C09K11/685C09K11/687C09K11/7769H01L33/502
Inventor 杜甫罗伟周裕强林敏怡赵文蔡济隆林金填
Owner XUYU OPTOELECTRONICSSHENZHEN CO LTD
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