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Semiconductor memory device and method of manufacturing the same

A memory and semiconductor technology, applied in the fields of semiconductor/solid-state device manufacturing, semiconductor devices, electric solid-state devices, etc., can solve the problems of high reliability, integration density deterioration, etc.

Pending Publication Date: 2022-06-03
SAMSUNG ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, since the reliability of semiconductor devices may be degraded due to their high integration density, research to improve the reliability of such semiconductor devices has been conducted

Method used

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  • Semiconductor memory device and method of manufacturing the same
  • Semiconductor memory device and method of manufacturing the same
  • Semiconductor memory device and method of manufacturing the same

Examples

Experimental program
Comparison scheme
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Embodiment Construction

[0014] figure 1 is a plan view of a semiconductor memory device according to some example embodiments. figure 2 is along figure 1 A cross-sectional view taken from line A-A' and line B-B' of , image 3 and Figure 4 Yes figure 2 A magnified view of the area 'AR'.

[0015] refer to figure 1 and figure 2 , a substrate 101 may be provided. The substrate 101 may include a semiconductor substrate. In an embodiment, the substrate 101 may be, for example, a silicon (Si) substrate, a germanium (Ge) substrate, or a silicon germanium (Si-Ge) substrate.

[0016] Device isolation patterns 102 may be disposed in the substrate 101 to define active regions ACT. Each of the active regions ACT may have an isolation shape such as an island shape. Each of the active regions ACT may have a bar shape extending in the first direction X1 when viewed in a plan view. Each of the active regions ACT may correspond to a portion of the substrate 101 surrounded by the device isolation pattern...

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Abstract

A semiconductor memory device includes a device isolation pattern on a substrate to define an active region; a word line in the substrate to intersect the active region; a first doped region in the active region and at a first side of the word line; a second doped region in the active region and at a second side of the word line; a bit line connected to the first doped region and intersecting the word line; a bit line contact connecting the bit line to the first doped region; a landing pad on the second doped region; and a storage node contact connecting the landing pad to the second doped region, the storage node contact including: a first portion in contact with the second doped region, the first portion including monocrystalline silicon; and a second portion on the first portion and including polysilicon.

Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS [0002] Korean Patent Application No. 10-2020-0165367, filed in the Korean Intellectual Property Office on December 1, 2020, entitled "Semiconductor Memory Device and Method of Manufacturing Semiconductor Memory Device," is incorporated herein by reference in its entirety. technical field [0003] Embodiments relate to a semiconductor memory device and a method of manufacturing the semiconductor memory device. Background technique [0004] Semiconductor devices are widely used in the electronics industry because of their small size, multifunctional properties, and / or low manufacturing costs. Semiconductor devices can be classified into, for example, semiconductor memory devices for storing logic data, semiconductor logic devices for processing logic data, and hybrid semiconductor devices having both the function of the semiconductor memory device and the function of the semiconductor logic device. [0005] High-speed low-volta...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/108H01L21/8242
CPCH10B12/30H10B12/482H10B12/488H10B12/485H10B12/315H10B12/34H10B12/0335H01L21/76883H01L21/28525H01L21/28562H10B12/03H10B12/033
Inventor 文大荣具滋玟金奎完朴奇洙
Owner SAMSUNG ELECTRONICS CO LTD