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Preparation method of image sensor and image sensor

An image sensor and control circuit technology, used in semiconductor devices, electric solid state devices, radiation control devices, etc., can solve problems such as dangling bond damage, image quality degradation, and difficulty in effective imaging, reducing surface dark current and improving image quality. Effect

Pending Publication Date: 2022-06-03
UNITED MICROELECTRONICS CENT CO LTD
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Problems solved by technology

[0002] For image sensors, the new silicon surface exposed after the thinning of the backside process will have defects, dangling bonds, and damage, which will generate surface dark currents, which will sharply increase the noise of the image sensor, greatly reduce the imaging quality, and even make it difficult to effectively imaging

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  • Preparation method of image sensor and image sensor
  • Preparation method of image sensor and image sensor
  • Preparation method of image sensor and image sensor

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Embodiment Construction

[0011] The specific embodiments of the method for preparing an image sensor provided by the present invention will be described in detail below with reference to the accompanying drawings.

[0012] attached figure 1 Shown is a schematic diagram of the steps described in a specific embodiment of the present invention, including: step S11, depositing an active passivation layer on the light incident surface of the image sensor, the active passivation layer including a charge storage area; step S12, in the active type A transparent conductive film is grown on the surface of the passivation layer; step S3, the active passivation layer is patterned, and the corresponding part of the transparent conductive film is removed to expose the control circuit disposed inside the image sensor; step S14, the The metal wires that electrically connect the transparent conductive film and the control circuit.

[0013] attached Figures 2A-2C As shown, referring to step S11 , an active passivati...

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Abstract

The invention provides a preparation method of an image sensor and the image sensor, and the image sensor comprises an active passivation layer which comprises a charge storage region; the transparent conductive film covers the active passivation layer; the insulating layer covers the side wall of the active passivation layer; and the metal wire enables the transparent conductive film and the control circuit to form electrical connection. According to the technical scheme, electrons can be captured and stored through the active passivation layer, so that photo-induced electrons are not easy to reach the light incident surface of the image sensor, the surface dark current is reduced, and the imaging quality of the image sensor is greatly improved. And the transparent conductive film is electrically connected with the control circuit, so that the function of periodically and actively controlling the passivation layer is realized.

Description

technical field [0001] The invention relates to the field of semiconductors, and in particular, to a preparation method of an image sensor and an image sensor. Background technique [0002] For the image sensor, the exposed new silicon surface will have defects, dangling bonds and damage after the backside process is thinned, which will generate surface dark current, sharply increase the noise of the image sensor, greatly reduce the image quality, and even make it difficult to effectively imaging. Therefore, reducing the dark current on the surface of the image sensor becomes the key to the application of the image sensor. SUMMARY OF THE INVENTION [0003] The technical problem to be solved by the present invention is the dark current on the surface of the image sensor, and a preparation method of the image sensor and the image sensor are provided. [0004] The invention provides a preparation method of an image sensor, comprising the following steps: depositing an activ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/146
CPCH01L27/14685H01L27/1462H01L27/14636Y02P70/50
Inventor 张舒黄文军陈世杰张斌
Owner UNITED MICROELECTRONICS CENT CO LTD
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