Reference voltage determination method and device, computer equipment and storage medium

Abstract

The embodiment of the invention provides a reference voltage determination method and device, computer equipment and a storage medium, and relates to the technical field of memories. The reference voltage determination method is applied to the random access memory, and comprises the following steps: performing data writing training on the random access memory according to each initial reference voltage to obtain each data writing delay window corresponding to each initial reference voltage; determining an initial reference voltage corresponding to the initial data write-in delay window, a termination reference voltage corresponding to the termination data write-in delay window and an optimal reference voltage corresponding to the maximum data write-in delay window which are greater than those in the preset data write-in delay window in the plurality of data write-in delay windows; and determining a target reference voltage corresponding to the random access memory according to the initial reference voltage, the termination reference voltage and the optimal reference voltage. The technical problem of poor reliability of the reference voltage of the DDR4 memory in the prior art is solved, and the technical effect of improving the reliability of the reference voltage of the DDR4 memory is achieved.

Description

technical field [0001] The present application relates to the field of memory technologies, and in particular, to a reference voltage determination method, apparatus, computer device, and storage medium. Background technique [0002] The current training method for the reference voltage of DDR4 (Double Data Rate 4, the fourth generation of double-rate synchronous dynamic random access) memory refers to the interface signals and steps specified in Write DQ Training (data writing training) in the DFI (DDR PHY Interface) 4.0 protocol. , implemented using the DDR controller and the PHY (Physical Layer). [0003] In data reading and writing, the read data strobe signal (DQS signal) is generally used as a clock signal to collect read and write data (DQ signal) to achieve the purpose of reading and writing. Data writing training refers to scanning the delay of the built-in data writing delay chain in the physical layer to obtain a delay window that can read and write data normally...

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Problems solved by technology

However, the optimal reference voltage determined in this way is generally easy to shift to one side, for example, close to the left boundary or the right boundary. In actual work, once the actual reference voltage jitters, it is easy to jump out of the delay window, resulting in data write error

[0004] Therefore, the reliability of the current DDR4 memory reference voltage is poor

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