Semiconductor module

A technology for semiconductors and shells, which is applied in the direction of semiconductor devices, semiconductor/solid-state device manufacturing, semiconductor/solid-state device components, etc. It can solve the problems of miniaturization of semiconductor modules, reduce the allowable current value, and increase the electrode width. Achieve the effects of shortening the electrode path, reducing inductance, and suppressing surge voltage

Pending Publication Date: 2022-07-29
MITSUBISHI ELECTRIC CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the case of seeking high-speed switching, the allowable current value will be reduced, and the current capacity is limited
In order to reduce the inductance, it is effective to reduce the current density of the electrode, but if the electrode cannot be thickened, the electrode width will be increased, and there is a problem that the miniaturization of the semiconductor module becomes difficult

Method used

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  • Semiconductor module
  • Semiconductor module
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Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach 1

[0023] figure 1 It is a top view which shows the structure of the semiconductor module 100 of Embodiment 1, and the upper surface of the resin case CS is abbreviate|omitted in order to clarify an internal structure. in addition, figure 2 is a cross-sectional view showing the structure of the semiconductor module 100, and is figure 1 Sagittal section at line A-A in .

[0024] like figure 1 and figure 2 As shown, in the semiconductor module 100 , the upper surface of the base plate BS functioning as a heat dissipation plate and the conductor film CF on the lower surface of the insulating substrate IS are bonded via a bonding material SD1 such as solder. A circuit pattern PT is provided on the upper surface of the insulating substrate IS, and a plurality of semiconductor elements SE such as transistor chips and diode chips for power are bonded to the circuit pattern PT via a bonding material SD2 such as solder.

[0025] The insulating substrate IS is made of resin or ceram...

Embodiment approach 2

[0046] In the semiconductor module 100 of the first embodiment described above, the high-potential electrode HT, the low-potential electrode LT, and the output electrode OT each have the inclined portion SL at one location, but the inclined portion may be Each electrode is provided at a plurality of locations.

[0047] Figure 9 is a cross-sectional view showing the structure of the semiconductor module 200 according to the second embodiment, which is the same as the figure 1 The sagittal section at line A-A in the equivalent figure. Furthermore, in Figure 9 in, right and use figure 1 and figure 2 The same structures of the semiconductor modules 100 described above are marked with the same reference numerals, and repeated descriptions are omitted.

[0048] like Figure 9 As shown, one end of the high potential electrode HT and the low potential electrode LT of the semiconductor module 200 is exposed at the upper surface of the terminal block TB1 protruding from the sid...

Embodiment approach 3

[0053] Figure 10 and Figure 11 They are a plan view and a cross-sectional view, respectively, for explaining the manufacturing method of the semiconductor module 300 according to the third embodiment. Furthermore, in Figure 10 and Figure 11 in, right and use figure 1 and figure 2 The same structures of the semiconductor modules 100 described above are marked with the same reference numerals, and repeated descriptions are omitted.

[0054] like Figure 10 and Figure 11 As described above, the semiconductor module 300 has the case CS completed by forming the side walls of the case CS in which the high-potential electrodes HT and the low-potential electrodes LT are housed independently of other parts of the case CS, The separate side wall CSX is joined to the other parts of the casing CS by adhesive or the like. Therefore, there is a seam between the side wall CSX and the other parts.

[0055] The closer the inter-electrode distance between the high-potential elect...

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PUM

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Abstract

Provided is a semiconductor module which is provided with an electrode structure having a low inductance, whereby a surge voltage can be suppressed even during a high-speed on-off operation of a switching element, and which can be reduced in size. The semiconductor device includes: a semiconductor element; a substrate on which the semiconductor element is mounted; a heat dissipation plate on which the substrate is mounted; a resin case that accommodates the substrate and the semiconductor element; and first and second main current electrodes through which a main current of the semiconductor element flows, one end of each of the first and second main current electrodes being joined to the circuit pattern on the substrate, and the other end of each of the first and second main current electrodes being fitted through the side wall of the resin case so as to protrude to the outside of the resin case. The first and second main current electrodes each have an overlapping portion in which at least parts thereof overlap in parallel with a gap therebetween, and each have an inclined portion provided between an outer protruding portion protruding to the outside of the resin case and an inner protruding portion protruding to the inside of the resin case.

Description

technical field [0001] The present invention relates to a semiconductor module, in particular, to a semiconductor module having an electrode structure capable of reducing inductance. Background technique [0002] Conventionally, Patent Document 1 has been proposed as an electrode structure for suppressing a surge voltage on a power supply line of a semiconductor module. figure 1 the disclosed construction. exist figure 1 Among them, two power supply terminals made of plate-shaped conductors are arranged in close proximity to each other via an insulating sheet having a thickness of 0.5 mm to 1.5 mm, and currents flowing through the two power supply terminals are antiparallel to each other. Therefore, it is disclosed that the inductance parasitic formed in the path formed by the two power supply terminals and the semiconductor element is reduced, and the surge voltage is also reduced. [0003] Patent Document 1: Japanese Patent Application Laid-Open No. 6-21323 [0004] Th...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/62
CPCH01L23/62H01L23/053H01L23/04H01L21/50H01L2224/32225H01L2224/29101H01L2924/13055H01L2924/10272H01L24/29H01L24/32H01L23/49811H01L25/072H01L23/645H01L2924/014H01L2924/00014H01L23/049H01L23/3735H01L2924/30107H01L2924/1715
Inventor 后藤亮清水康贵
Owner MITSUBISHI ELECTRIC CORP
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