Method and device for inteconnect radio frequency power SiC field effect transistors

Abstract

The present invention relates to a method and device for interconnecting radio frequency power SiC field effect transistors. To improve the parasitic source inductance advantage is taken of the small size of the transistors, wherein the bonding pads are placed on both sides of the die in such a way that most of the source bonding wires (6) go perpendicularly to the gate and drain bonding wires (7, 8). Multiple bonding wires can be connected to the source bonding pads, reducing the source inductance. An additional advantage comes from such arrangement by reducing the mutual inductance between source / gate and between source / drain due to the orthogonal wire placement.

Description

field of invention [0001] The invention relates to an interconnection method and device of a radio frequency power silicon carbide field effect transistor, the device includes an interconnection design of a radio frequency power silicon carbide field effect transistor and a radio frequency power silicon carbide field effect transistor with the interconnection design. background of the invention [0002] Silicon carbide (SiC) transistors have begun to replace Si and GaAs transistors for power generation at GHz frequencies. It has been foreseen and experimentally shown that silicon carbide transistors, relying on excellent material properties, are capable of handling much higher powers than the other types of transistors mentioned, i.e. transistors of the same size can produce several times higher power . To take full advantage of the advantages of the SiC die in the actual transistor package, the die-to-package connection should also be modified. Utilizing a conventional ME...

AI Technical Summary

Problems solved by technology

Especially parasitic source inductance is detrimental to transistor characteristics

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