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Method for operating CMOS image sensor

A technology of image sensor and light sensor, which is applied in image communication, color TV parts, TV system parts, etc., can solve the problem of charge carrier diffusion, etc., and achieve the effect of reducing the duration and reducing the manufacturing cost

Inactive Publication Date: 2005-07-20
ASULAB SA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0012] It is an object of the present invention to provide a method for operating a CMOS image sensor of the type described which solves the problem of charge carrier diffusion that such sensors have

Method used

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  • Method for operating CMOS image sensor
  • Method for operating CMOS image sensor

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Embodiment Construction

[0024] Below with the help of image 3 A method according to the invention for operating the pixel 50 of FIG. 2B is described. image 3 Timing diagram showing the progression of control signals T1, SH, RST and RSEL for operating the pixel structure of FIG. 2B. Also schematically shown in this figure is the voltage V of the photodiode PD PDchanges and the voltage V of the pixel storage node 55 1 The change.

[0025] It should be understood that the method according to the invention is not limited to the operation of structures such as those shown in Figure 2B, but can be applied in a similar manner to Figure 2A Any type of structure in the form of the structure shown, i.e. a structure comprising a light sensor element and a storage device capable of being coupled to the light sensor element at a certain moment in time for generating and storing a representation The sampling signal of the charge carrier. Nevertheless, the structure of Fig. 2B is still a simple and particul...

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Abstract

The present invention concerns a method for operating a CMOS image sensor including a matrix of pixels (50) arranged in a plurality of lines and columns, each of said pixels including a photosensor element (PD) accumulating charge carriers in proportion to the illumination thereof and storage means (C1,55) able to be coupled to said photosensor element (PD) at a determined instant in order to generate a sampled signal representative of said charge carriers accumulated by the photosensor, the storage means (C1, 55) being intended to assure storage for the purpose of reading said sampling signal.

Description

technical field [0001] The present invention generally relates to methods for operating integrated image sensors. More specifically, the present invention relates to methods for operating integrated image sensors using CMOS technology. This CMOS image sensor is intended for use in the manufacture of integrated picture and video devices. Background technique [0002] Current integration technologies enable the manufacture of image capture devices that operate in an integrated form. Such an integrated image capture device includes a light sensor component on the same chip, which typically consists of an assembly of light sensor elements organized into an array, as well as components designed to capture images and read images picked up by the light sensor component. data processing components. [0003] Generally speaking, integrated image capture devices rely on charge transfer techniques. According to these techniques, charges generated by light are collected and transferr...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/146H04N5/359H04N5/374
CPCH04N5/374H01L27/14643H04N5/3594H04N25/623H04N25/76
Inventor S·劳克斯特尔曼S·谭纳J·格鲁普
Owner ASULAB SA