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CVD apparatus

A plasma and space technology, used in gaseous chemical plating, coatings, electrical components, etc., can solve the problems of electromagnetic wave interference, complexity, cost increase, etc., and achieve the effect of low production cost

Inactive Publication Date: 2006-02-01
ANELVA CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] First, on the corresponding RF external electrode, the respective RF power supply must be required, and the cost increases
Second, if multiple RF power sources are used simultaneously in one vacuum container, interference of electromagnetic waves will occur
However, in order to solve the interference of electromagnetic waves by such a method, it is necessary to require complicated devices and adjustments, and in addition, the cost increases.

Method used

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  • CVD apparatus
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Embodiment Construction

[0032] The preferred embodiments of the present invention will be described below according to the accompanying drawings.

[0033] figure 1 and figure 2 A typical example of the CVD apparatus of the present invention is shown. In addition, in the drawings, the illustration of the vacuum container itself is omitted. The interior of the vacuum container is kept at the desired vacuum state. The illustration of the exhaust mechanism for bringing the inside of the vacuum container into a vacuum state is also omitted. The CVD apparatus of this embodiment is an apparatus for forming double-sided (two-sided) films. The structure 11 for plasma generation is mainly composed of one RF external electrode 12 and two ground electrodes 13 . The RF external electrode 12 and the ground electrode 13 have a planar form, and they are disposed opposite to each other in parallel with the RF external electrode 12 sandwiched by the ground electrode 13 from both sides. The RF external electrode...

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Abstract

The invention provides a CVD apparatus which supplies active species to a film- forming space by using a separating plasma-generating space, enables multiple- faces film formation, reduces a cost of the multiple-faces film formation, and simplifies a configuration of the apparatus. The CVD apparatus comprises having the plasma generation space separated from the film-forming space, taking out the active species from plasma, forming the film on the substrate in the film-forming space based on the CVD reaction, and having a structure 11 consisting of an RF application electrode 12 and an earth electrode 13; arranging the plasma generation space between both electrodes 12 and 13, and the RF application electrode so as to be surrounded by the earth electrode; and forming the film simultaneously on the several substrates which oppose to the structure from each different direction, and are arranged so as to be associated with locations of the RF application electrode, the earth electrode, and the substrate. Just one high frequency power source 27 for supplying an RF electric power to the RF application electrode is installed regardless of the number of the earth electrodes or the substrates.

Description

technical field [0001] The present invention relates to a CVD apparatus, and in particular, the present invention relates to a CVD apparatus suitable for forming a film on a plurality of surfaces in the following occasions, and in this case, has a structure in which the plasma formation space is separated from the film formation space, such as a thin film Like transistors, integrated circuits, etc., a thin film is formed on a substrate. Background technique [0002] In the past, there has been known a CVD apparatus (hereinafter referred to as "plasma separation type CVD apparatus") which is provided with a structure in which reactive plasma is supplied to the film forming space. The bulk plasma generation space is separated from the film formation space where the substrate is provided and a film is formed on the surface of the substrate by CVD action. In such a plasma separation type CVD apparatus, a structure for generating plasma and supplying reactive plasma in the plasm...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/452C23C16/505C23C16/509C23C16/50H01L21/205
CPCC23C16/452C23C16/509
Inventor 佐藤正律
Owner ANELVA CORP