Unlock instant, AI-driven research and patent intelligence for your innovation.

Processing apparatus for plasma

A technology of plasma and processing equipment, which is applied in the field of plasma processing equipment and can solve problems such as lack of any guiding measures

Inactive Publication Date: 2007-01-24
SHARP KK +1
View PDF7 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, those published patents mentioned above do not have any guiding measures for making such a design

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Processing apparatus for plasma
  • Processing apparatus for plasma
  • Processing apparatus for plasma

Examples

Experimental program
Comparison scheme
Effect test

no. 1 example

[0032] see now Figure 1-Figure 3 , the plasma processing equipment of the first embodiment includes: a chamber cover 1 as a main component, a processing chamber body 2, a waveguide 3, an entrance waveguide 3a, a first dielectric 4, a second dielectric 5, a support 6, a slot antenna plate 7 and a substrate holder 8.

[0033] It should be noted that, figure 1 with figure 2 Each cross-section shown in the image 3 The lines I-I and II-II in correspond to each other.

[0034] The chamber cover 1 is placed opposite the chamber body 2, and they are sealed with a gasket 10. The chamber cover 1 has a slit-shaped opening 1a, the first dielectric 4 is inserted into the slit-shaped opening, and is made of such as SiO 2 、Al 2 o 3 and AIN-like dielectrics, and have a "T"-shaped cross-section shown with bold longitudinal lines. The chamber cover 1 and the first dielectric 4 are also sealed by a gasket 11 which together with the gasket 10 seals off the interior 13 of the chamber. ...

no. 2 example

[0062] According to said first embodiment, microwaves are transmitted through a double dielectric structure consisting of said first and second dielectrics. According to a second embodiment, a Image 6 The plasma processing device shown is constructed without the second dielectric, but with a first dielectric 4 extending in the direction of the shorter side (the direction in which the waveguide extends). Then, a slot antenna plate 7 is in contact with the first dielectric 4 . A support 6 supports only the slot antenna plate 7 .

[0063] The structures of the components other than those described above are almost the same as those of the first embodiment. Components corresponding to each other are shown by the same numerals, so details will not be repeated.

[0064] The slots 7a of the slot antenna board 7 are designed according to the second embodiment as described below.

[0065] A model including a microwave inlet, waveguide 3, an inlet waveguide 3a and a first dielectri...

no. 3 example

[0069] see now Figure 7 with Figure 8 , The plasma processing apparatus according to the third embodiment is constructed to have gas grooves 7b and 7c provided in a slot antenna plate 7. The slot antenna board 7 is not supported by the supports used in the first and second embodiments, but is fixed directly to a chamber cover 1, for example by means of screws.

[0070] It should be noted that, Figure 7 is one with Figure 8 Schematic cross-sectional view corresponding to midline VII-VII.

[0071] The structures of the components other than those described above are almost the same as those of the second embodiment. Components corresponding to each other have adopted the same number, so no more details are given.

[0072] According to said third embodiment, the slot antenna plate 7 has some gas grooves. Thus, it does not require some gas channels in said support as in said first and second embodiments. If the support has the gas grooves, no gas grooves may be provided...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
Login to View More

Abstract

A slot antenna plate is placed on a second dielectric for radiating microwave into a chamber interior, the slot antenna plate being provided on a side of the second dielectric that faces the chamber interior. The slot antenna plate is made of conductor and includes slots for passing the microwave therethrough to the chamber interior. In this way, a plasma processing apparatus is provided generating plasma by microwave, the plasma processing apparatus capable of easily adjusting ion irradiation energy for a material to be processed to achieve uniform plasma processing for the material within the plane of the material.

Description

technical field [0001] The invention relates to a plasma processing device. In particular, the present invention relates to plasma processing equipment such as etching, thin film deposition and ashing equipment, used for processing operations in the manufacture of, for example, semiconductor devices, liquid crystal displays or solar cells. Background technique [0002] As the size of substrates used to manufacture semiconductor devices, LCDs (liquid crystal displays) or the like increases, plasma processing equipment for processing such a substrate having a relatively large area has recently been developed. . Equipment specifically for LCDs has been developed to process substrates 1 meter by 1 meter or larger. These devices present the challenge of homogenizing the plasma. The problem to be solved by the equipment developed for thin film deposition, etching and polishing is to increase the plasma processing rate to increase the throughput of the equipment. The problem th...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/3065H01L21/205C23C16/00C23C16/513H05H1/46C23F4/00H01J37/32H01L21/302
CPCH01J37/32192H01J37/32211H05H1/46
Inventor 山本直子山本达志平山昌树大见忠弘
Owner SHARP KK