Secondary battery negative pole (anode) and making method
A secondary battery and manufacturing method technology, applied in the direction of secondary batteries, electrode manufacturing, battery electrodes, etc., can solve the problems of electrode failure, poor conductivity, etc., and achieve the effects of improving life, increasing specific energy, and uniform volume expansion
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Embodiment 1
[0023] Embodiment 1: Preparation and charge and discharge performance of amorphous silicon negative electrode (anode) electrode
[0024] Place two commercially available silicon targets in parallel in the magnetron sputtering apparatus as shown in Figure 1. The silicon targets are placed opposite each other as cathodes, the stainless steel bell jar is used as anode grounding, and an external magnetic field is applied perpendicular to the target surface. Place a piece of copper foil, nickel foil, copper-plated or / and nickel-plated iron foil on the sample holder between two silicon targets as the electrode collector, and then evacuate to 10 -4 Below Pa. Introduce high-purity argon to make the argon pressure reach 0.2Pa. Then, apply a voltage of 300V to the silicon target, control the current to 0.1A, take out the current collector after sputtering for 2 hours, and obtain the negative (anode) electrode of the present invention, and its thickness is 5 μm after measurement. Since...
Embodiment 2
[0026] Embodiment 2: Preparation and charge and discharge performance of amorphous Si-Sn negative pole (anode) electrode
[0027] The preparation method of the binary alloy is the same as that of Example 1. Place two commercially available silicon targets and two metal M targets in parallel in the magnetron sputtering apparatus, and place a piece of copper foil, nickel foil, copper-plated or / and nickel-plated iron on the sample holder among the four targets foil as the electrode current collector, and then evacuated to 10 -4 Below Pa. Introduce high-purity argon to make the argon pressure reach 0.1Pa. Then, apply a voltage to 200V to the silicon target, control the current to 0.15A, apply a voltage to the metal Sn target to 200V, and use a current of 0.2A, take out the current collector after sputtering for 3 hours, and obtain the negative electrode (anode) of the present invention electrode. According to elemental analysis, its composition is Si 0.7 sn 0.3 Its thickness i...
Embodiment 3
[0030] Embodiment 3: preparation and charging and discharging performance of amorphous Si-Sb negative electrode (anode) electrode
[0031] The preparation method of this alloy is the same as that of Example 2. Vacuum to 10 -4 Below Pa, pass high-purity argon to make the argon pressure reach 0.5Pa. Then, apply a voltage to 100V to the silicon target, control the current to 0.15A, apply a voltage to the metal Sb target to 200V, and a current of 0.3A, take out the current collector after sputtering for 2 hours, and obtain the negative electrode (anode) of the present invention electrode. According to elemental analysis, its composition is Si 0.6 Sb 0.4 , with a thickness of 15 μm.
[0032] Its cycle life curve is similar to that in Figure 4. Si 0.6 Sb 0.4 The electrodes showed good cycling performance in both electrolytes. In 1MLiPF 6 (EC:DEC=1:1v / v%) In the electrolyte, the first cycle has the highest capacity, up to 2517mAh / g, and the irreversible capacity is 2% of th...
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Abstract
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