Unlock instant, AI-driven research and patent intelligence for your innovation.

Inductively coupled plasma etching apparatus

A plasma and corrosion device technology, which is applied to discharge tubes, electrical components, circuits, etc., and can solve the problem that the corrosion process cannot be carried out.

Inactive Publication Date: 2007-06-06
LAM RES CORP
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

As mentioned above, the presence of a conductive film on the wall 401 is undesirable because it can electrically shield the electromagnetic current in the chamber, thereby making the etching process impossible.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Inductively coupled plasma etching apparatus
  • Inductively coupled plasma etching apparatus
  • Inductively coupled plasma etching apparatus

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0022] Several exemplary embodiments of the present invention will be described in detail below with reference to the accompanying drawings. Figure 1 was introduced in the "Background of the Invention" section.

[0023] Figure 2 shows a simplified schematic cross-sectional view of an inductively coupled plasma etching apparatus according to one embodiment of the present invention. As shown in FIG. 2, a semiconductor wafer 111 is mounted on a chuck 115 disposed within a chamber 100 defined by the walls of an enclosure with the chuck adjacent the lower wall of the enclosure. The coil 313 is supported on the upper wall 101 of the chamber 100 by spacers 203, which may be formed of an insulating material. In operation, a reaction gas is fed into the chamber 100 through a gas introduction port (not shown). High frequency power is then applied to the coil 313 from a power source (not shown). A high frequency (RF) current flowing through the coil 313 induces an electromagnetic curr...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

An inductively coupled plasma etching apparatus includes a chamber (100) for generating a plasma therein. The chamber (100) is defined by walls of a housing. A coil (313) for receiving high frequency (RF) power is disposed adjacent to and outside of one of the walls (101) of the housing. A metal plate (217) is disposed adjacent to and outside of the wall (101) of the housing that the coil (313) is disposed adjacent to. The metal plate (217) is positioned in a spaced apart relationship between the coil (313) and the wall (101) of the housing and has radial slits formed therein that extend transversely to the coil (313). A connector (207) electrically connects the metal plate (217) to the coil (313). A method for controlling an inner surface of a wall defining a chamber in which a plasma is generated is also described.

Description

technical field [0001] The present invention relates generally to the manufacture of semiconductors, and more particularly to an inductively coupled plasma etching apparatus and a method for controlling the surface of a chamber of an inductively coupled plasma etching apparatus. Background technique [0002] In a semiconductor manufacturing process, an etching process, an insulating film formation, and a diffusion process are repeatedly performed. Those skilled in the art know that there are two types of etching processes: wet etching and dry etching. Dry etching is typically performed using an inductively coupled plasma etching apparatus such as that shown in FIG. 1 . [0003] In the inductively coupled plasma etching apparatus shown in FIG. 1, a reaction gas first enters the chamber 400 through a gas introduction port (not shown). High frequency power is then applied to the coil 407 by a power supply (not shown). A semiconductor wafer 411 is mounted on a chuck 409 provi...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01J37/32
CPCH01J37/321
Inventor 中嵨州
Owner LAM RES CORP