AC timing parameter controlling circuit and method for semiconductor memory equipment

Abstract

A circuit for controlling an AC-timing parameter of a semiconductor memory device and method thereof are provided. The AC-timing parameter control circuit includes a delay-time-defining portion, a comparing portion, and a controlling portion. The control circuit compares the pulse width or period of an input signal to one or more different reference-widths pulses, with the reference width(s) set by the delay-time-defining portion and the reference pulses generated by the comparing portion. The controlling portion indicates whether the input signal width or period was less than or greater than each o the reference-width pulses. The control circuit output signals can be used to tailor the operation of the device based on a direct comparison of an AC-timing parameter to one or more reference values.

Description

technical field [0001] The present invention relates to a semiconductor storage device, and more particularly to a circuit for controlling the AC timing parameters of the semiconductor storage device and controlling the operation of the semiconductor storage device by identifying changes in the AC timing parameters. Background technique [0002] The operation timing (also called AC timing) parameter of the semiconductor storage device defines a specific operation time or a time interval between specific operations, and specifies the allowable limit of operation timing to ensure the normal operation of the semiconductor storage device. [0003] Generally, a specific value of an AC timing parameter of a semiconductor memory device is defined as a plurality of predetermined reference times or periods of a reference clock signal. The larger the allowable limit for a specific value of the AC timing parameter, the better the performance of the semiconductor memory device can be gu...

AI Technical Summary

Problems solved by technology

[0006] However, when applying MRS, in case the AC timing parameters change and need to reflect their changes, the programming process of MRS must be performed separately

This makes it difficult to keep the operating characteristics of the semiconductor memory device consistent, degrading the performance of the semiconductor memory device

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