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Cylindrical target and method of mfg. same

A manufacturing method, cylindrical technology, applied in the direction of ion implantation plating, coating, electrical components, etc., can solve the problems of unsuitable substrate tube reuse, insufficient strength, lack of reliability, etc.

Inactive Publication Date: 2003-10-29
ASAHI GLASS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In addition, when the target material is made of ceramics, since the thermal expansion coefficient of the target material is generally smaller than that of the metal substrate tube and the indium of the bonding material, the contraction during cooling after bonding is poor, resulting in a Disadvantages of gaps formed at joints
[0005] In addition, when the target material is consumed by sputtering, the target can be replaced, but in the case of a target made by sputtering or indium bonding, it is difficult to separate the substrate tube from the target material, and Not suitable for substrate tube reuse (recycle)
[0006] On the other hand, although it is also possible to integrally form the part corresponding to the substrate tube with the target material, the integrated target is not reliable as a structural body due to insufficient strength of ceramics or a part of the metal material or poor mechanical shock resistance. sex
In addition, since the expensive target material is integrally formed, there is also a problem in terms of manufacturing cost

Method used

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  • Cylindrical target and method of mfg. same
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  • Cylindrical target and method of mfg. same

Examples

Experimental program
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Effect test

Embodiment 1

[0063] Hereinafter, more specific aspects of the present invention will be described through examples.

[0064] A cylindrical target for forming a silicon dioxide thin film with a DC magnetron sputtering apparatus was produced as follows.

[0065] As the target material 20, it is made to have a hollow cylindrical silicon carbide sintered body containing silicon with an outer diameter of φ152mm, an inner diameter of φ138mm and a length of 220mm, and then the six sintered bodies are connected to form a total length of 1320mm target material. In addition, the inner peripheral surface and the outer peripheral surface of the target material 20 were still the sintered surface, and both end surfaces of the sintered body were cut and processed to have a length of 220 mm. The dimensional accuracy of the inner and outer diameters is about ±0.5mm due to deformation etc. during the manufacture of the sintered body.

[0066] The substrate tube supporting the target material 20 was produc...

Embodiment 2

[0078] A cylindrical target for forming a silicon dioxide thin film with a DC magnetron sputtering apparatus was produced as follows.

[0079] As the target material 20, a hollow cylindrical silicon-containing silicon carbide sintered body having an outer diameter of φ152 mm, an inner diameter of φ138 mm, and a length of 220 mm is made, and then the six sintered bodies are connected to form a total length of 1320 mm. target material. The inner peripheral surface of the target material 20 is still a sintered surface, but the outer peripheral surface is ground, the two ends of the sintered body are cut and processed to a length of 220 mm, and then the inner surfaces of both ends are stepped. The dimensional accuracy of the inner diameter is about ±0.5mm due to deformation etc. during the manufacture of the sintered body.

[0080] The substrate tube supporting the target material 20 was manufactured by processing a commercially available SUS304 tube (according to JIS G3459: 135A...

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Abstract

The result is a cylindrical target which increases the material selection possibilities of the target material and of the substrate tube supporting this target material and is easy to manufacture and reusable. A buffer member 52 such as carbon felt is placed between the metal substrate tube as the inner cylinder and the cylindrical target material as the outer cylinder, and the two are joined to form a cylindrical target.

Description

technical field [0001] The present invention relates to the structure of a cylindrical target and its manufacturing method. This cylindrical target is suitably used in a magnetron sputtering device (especially a DC magnetron sputtering device) for thin film formation and the like. Background technique [0002] Magnetron sputtering is known as a technique for forming a thin film on a substrate such as glass or plastic. In 1993, Japanese Patent Publication No. 501587 discloses a magnetron sputtering system using a rotating cylindrical target. This device has a magnet inside the cylindrical target, cools the target from the inside, and rotates the target to perform sputtering. Cylindrical targets have the advantage of being more efficient in use and capable of high-speed film formation compared to flat-plate (planar) targets. [0003] As a method of manufacturing a cylindrical target, Japanese Laid-Open Patent Publication No. 214525 in 1993 discl...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/10C23C14/34H01J37/34
CPCC23C14/10C23C14/3407C23C14/3414H01J37/3402H01J37/3491C23C14/34
Inventor 植田宏神山敏久神田幸一
Owner ASAHI GLASS CO LTD