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Semiconductor device and its mfg. method

A device manufacturing method and semiconductor technology, applied in the direction of semiconductor/solid device manufacturing, semiconductor devices, electric solid devices, etc., can solve problems that hinder the manufacture of semiconductor devices, and achieve the effect of reducing the decline in manufacturing yield

Inactive Publication Date: 2003-12-10
RENESAS ELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, when the above-mentioned film is processed to form a semiconductor element, since the film in the subsequent process is formed to cover the edge portion of the underlying substrate or base film, the following problem arises: when the coverage is insufficient, the area of ​​the area film becomes a source of dust, hindering the fabrication of semiconductor devices

Method used

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  • Semiconductor device and its mfg. method
  • Semiconductor device and its mfg. method
  • Semiconductor device and its mfg. method

Examples

Experimental program
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Embodiment 1

[0075] Image 6 It is a process drawing showing the manufacturing method of the semiconductor device of this invention. First, if Image 6 As shown in (a), in a plurality of desired regions of the P-type silicon semiconductor substrate 17, for example, Sb is diffused to form a layer with an impurity concentration of 5×10 18 ~10 20 cm -3 N around + Buried layer 18. Next, grow about 3 to 10 μm on all sides of the wafer with an impurity concentration of 5×10 15 ~5×10 17 cm -3 left and right P-type silicon epitaxial layer 19 . Then, in the desired region, at the same concentration as that of the P-type epitaxial layer 19, a layer reaching the N epitaxial layer 19 is formed. + The N well region 20 is buried at the depth (about 2-9 μm) of the layer 18 . These 17, 18, 19, and 20 correspond to a semiconductor substrate (for example, a Si substrate) in the present invention.

[0076] Next, if Image 6 As shown in (b), on the surface of the epitaxial layer 19, an element iso...

Embodiment 2

[0094] Below, refer to Image 6 , a method of manufacturing a semiconductor device according to Embodiment 2 of the present invention will be described. The difference between embodiment 2 and embodiment 1 is in Image 6 (b) The process shown is the same as Image 6 Between the steps shown in (c), steps to be described below are added.

[0095] That is, in Example 2, after forming SiO 2 film (semiconductor film) 24, after forming a plurality of structure grooves 25, make SiO 2 The membrane 24 is flat. In addition, the CMP method is described in, for example, JP-A-9-22885. Next, as a cleaning device, use image 3 The shown RST100 device manufactured by SEZ uses the above-mentioned hydrofluoric acid (50% concentration) as the chemical agent, and does not add to Figure 9 The integrated circuit pattern area 35 that forms semiconductor element shown in (a) applies chemical agent and will be apart from the SiO of the area of ​​about 2mm outside the wafer edge 2 The film (sem...

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Abstract

In order to prevent dusting from a peripheral end portion of a wafer, a semiconductor film formed is removed from at least the entire surface of the backside and from the peripheral portion by etching at a high etching rate relative to an insulating film present beneath the semiconductor film, to realize a semiconductor apparatus in which the semiconductor film is formed in an integrated circuit pattern region on the face side. Thus, the problem of dusting from the peripheral portion of the wafer is obviated, and a semiconductor apparatus with high reliability is realized.

Description

technical field [0001] The present invention relates to a cleaning method applicable to various electronic components such as electronic materials, magnetic materials, optical materials, ceramics, and their manufacturing processes (hereinafter, general cleaning methods, surface treatment methods, etc. are collectively referred to as cleaning methods). In particular, it relates to a semiconductor device manufacturing method using an appropriate cleaning method and a semiconductor device manufactured by the manufacturing method. Background technique [0002] The structure of a general semiconductor device is as described in Patent Document 1. A thermal oxide film is formed on a Si substrate, an insulating film is formed by CVD (chemical vapor deposition) or PVD (physical vapor deposition), and then Semiconductor films are formed, and these films are processed to form the structure of a semiconductor element. Therefore, when the above-mentioned film is processed to form a semi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/306H01L21/02H01L21/205H01L21/311H01L21/3213H01L21/68H01L21/8242H01L21/8249H01L27/06H01L27/108
CPCH01L21/32134H01L21/6835H01L21/31111H01L21/02087H01L27/10861H01L2924/19041H01L21/0209H01L2924/30105H10B12/038H01L21/302
Inventor 太田胜启富山宪世一濑晃之
Owner RENESAS ELECTRONICS CORP