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Magnetic memory device and method

A magnetic storage and device technology, applied in static storage, digital storage information, magnetic objects, etc., can solve the problems of complexity and increase the complexity of the writing process.

Inactive Publication Date: 2004-04-07
SAMSUNG ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Furthermore, the presence of a magnetic field from the pinned layer typically results in the need to use an asymmetric magnetic field for switching the state of the data layer, which generally increases the complexity of the write process
Further complications often arise due to reduced tolerance to stray magnetic fields during write

Method used

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  • Magnetic memory device and method
  • Magnetic memory device and method
  • Magnetic memory device and method

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Embodiment Construction

[0020] Reference is now made in detail to preferred embodiments of the invention, magnetic memory systems and methods, examples of which are illustrated in the accompanying drawings. While the invention will be described in conjunction with preferred embodiments, it should be understood that the scope of the invention is not limited to these embodiments. On the contrary, the invention is intended to cover alternatives, modifications and equivalents, which may be included within the spirit and scope of the invention as defined by the appended claims. Moreover, in the following detailed description of the invention, numerous specific details are given in order to provide a thorough understanding of the invention. However, it is understood that the invention may be practiced without these specific details. In other words, well-known methods, procedures, components, and circuits are not described in detail so as not to obscure the aspects of the present invention.

[0021] The p...

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Abstract

The present invention is a magnetic memory device and method. In one embodiment a present invention magnetic memory device includes a synthetic ferrimagnetic data, a soft reference layer and a tunneling layer. The synthetic ferrimagnetic data layer has a magnetic moment directable to a first orientation and a second orientation. The soft reference layer has a lower coercivity than the synthetic ferrimagnetic data layer. The tunneling layer has electrical resistance qualities which are influenced by magnetic moment orientations of the synthetic ferrimagnetic data layer and the soft reference layer.

Description

technical field [0001] The present invention relates to a memory device, in particular, the present invention relates to a magnetic memory device. Background technique [0002] Electronic systems and circuits have contributed significantly to the advancement of modern science and are used in numerous applications to achieve beneficial results. Various electronic technologies such as digital computers, calculators, audio devices, video equipment, and telephone systems have facilitated increased productivity and reduced costs in analyzing and disseminating data, ideas, and trends in most areas of business, science, education, and banqueting . Typically, these advantageous results are achieved by employing information stored on storage media and controlled by processing means. The structure and type of memory used to store information can have a considerable impact on information processing performance. [0003] Various electronic devices include processors that operate by e...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/105G11C11/16H01F10/32H01L21/8246H01L43/08
CPCG11C11/16H01F10/3254B82Y25/00H01F10/3277
Inventor M·沙马L·T·特兰
Owner SAMSUNG ELECTRONICS CO LTD