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Method for manufacturing surface acoustic wave device

A surface acoustic wave device, surface temperature technology, applied in electrical components, impedance networks, etc., can solve the problems that the aluminum layer is not suitable for high-frequency operation and high-power operation and has sufficient performance, the aluminum layer has no stability, and the power durability is not enough. High reliability, excellent power durability, effect of increasing production cost

Active Publication Date: 2004-11-03
MURATA MFG CO LTD
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Problems solved by technology

As a result, these measures have the following problem: the aluminum layer does not have sufficient stability
Moreover, these measures also have the following problems: the aluminum layer does not have sufficient properties suitable for further improved high-frequency operation and high-power operation
Therefore, the method disclosed in Japanese Unexamined Patent Application No. 8-195635 has a problem of high production cost
This method has another problem that its power durability is not enough for further improved high-frequency operation and high-power operation

Method used

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  • Method for manufacturing surface acoustic wave device
  • Method for manufacturing surface acoustic wave device
  • Method for manufacturing surface acoustic wave device

Examples

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Embodiment Construction

[0021] Preferred embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

[0022] figure 1 Shown is a schematic sectional view of an example of a surface acoustic wave device produced by the production method of a preferred embodiment of the present invention.

[0023] figure 1 The shown surface acoustic wave device 20 includes a piezoelectric substrate 1, a first electrode layer 2 on the piezoelectric substrate 1, a second electrode layer 3 on the first electrode layer 2 and a The third electrode layer 4 .

[0024] For the piezoelectric substrate 1, lithium niobate (LiNbO) with rotated Y-cut X-propagation is preferably used. 3 ) substrate or lithium tantalate (LiTaO 3 ) substrate. Such as figure 2 As shown, the surface of the piezoelectric substrate 1 has a stepped structure including, for example, a step face with a width of about 50 nm or less and a step with a width of a monomolecular layer.

[0025] The w...

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Abstract

A piezoelectric substrate is provided with interdigital transducer electrodes including a first electrode layer, a second electrode layer, and a third electrode layer that is principally made of aluminum. The piezoelectric substrate has a stepped structure on the surface of the piezoelectric substrate, the stepped structure including terraces each having a width of about 50 nm or less and steps each having a width of a mono-molecular layer (e.g., about 14 ANGSTROM).

Description

technical field [0001] The present invention relates to a surface acoustic wave device such as a surface acoustic wave resonator and a surface acoustic wave filter and a method for preparing a surface acoustic wave device, more particularly, the present invention relates to a method for preparing a surface acoustic wave device for high frequency operation and high power operation approach, the device is equipped with high-power durable electrodes. Background technique [0002] In recent years, with the development of mobile phones and mobile communication systems, surface acoustic wave devices including desired electrode patterns disposed on piezoelectric substrates have been widely used in surface acoustic wave filters and surface acoustic wave resonators. The electrodes of this surface acoustic wave device were made of aluminum from the beginning of development because of its low specific gravity and low resistivity. On the other hand, surface acoustic wave devices design...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03H3/08H03H9/145
CPCH03H3/08Y10T29/49005Y10T29/49002Y10T29/42Y10T29/4908
Inventor 中川原修筱田明典
Owner MURATA MFG CO LTD
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