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Marker structure for alignment or overlay, mask pattern defined it and lithographic projector using the same

A technology of photolithography projection and mask pattern, applied in the field of mask pattern

Inactive Publication Date: 2012-03-28
ASML NETHERLANDS BV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

On the downside, the overlay control is not as effective: the device will have a different distortion than that measured at the location where the target or marking structure is overlaid

Method used

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  • Marker structure for alignment or overlay, mask pattern defined it and lithographic projector using the same
  • Marker structure for alignment or overlay, mask pattern defined it and lithographic projector using the same
  • Marker structure for alignment or overlay, mask pattern defined it and lithographic projector using the same

Examples

Experimental program
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Effect test

Embodiment Construction

[0054] - figure 1 A lithographic projection apparatus 1 comprising at least one marking structure according to a particular embodiment of the invention is schematically represented. The unit includes:

[0055] - A radiation system Ex, IL for providing a radiation projection beam PB (eg UV radiation). In this particular case, the radiation system also includes the radiation source SO;

[0056] - a first object table (mask table) MT provided with a mask holder for holding a mask MA (eg a reticle) and with first positioning means for precisely positioning the mask relative to the element PL device (not shown) connection;

[0057] - a second object table (substrate table) WT provided with a substrate holder for holding a substrate W (e.g. a resist-coated silicon wafer) and with second positioning means for precise positioning of the substrate relative to the element PL PW connection;

[0058] - A projection system ("lens") PL for imaging the radiation portion of the scrambled...

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PUM

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Abstract

The invention relates to a marker structure for alignment or overlay, mask pattern defined it and lithographic projector using the same. The mask pattern for imaging in lithographic projection a marker structure on a substrate, the marker structure, in use arranged for determining optical alignment or overlay, including constituent parts to define the marker structure, the constituent parts being segmented in a plurality of segmented elements (EL; ML), the segmented elements each having substantially a size of a device feature, the mask pattern including a segment shape for each segmented element (EL; ML), wherein the mask pattern for the marker structure includes at least one assist feature (EL_sub) located at a critical part of the segment shape for counteracting optical aberrations or optical limitations generated in the lithographic projection at the critical part, the at least one assist feature (EL_sub) having substantially a size below a resolution of the lithographic projection.

Description

technical field [0001] The invention relates to a mask pattern for alignment or overlay as defined in the preamble of claim 1 . Furthermore, the invention relates to a marking structure formed from such a mask pattern. Furthermore, the invention relates to a lithographic projection apparatus using marking structures. Background technique [0002] The invention finds application in the field of lithographic projection apparatus comprising a radiation system for providing a radiation projection beam, a support structure for supporting a patterning member for use in accordance with a desired pattern patterning the projection beam, a substrate table for holding the substrate; and a projection system for projecting the patterned beam onto a target portion of the substrate. [0003] The term "patterning device" should be broadly interpreted as a device capable of imparting a patterned cross-section to an incident radiation beam, wherein said pattern corresponds to a pattern to b...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F1/42G03F7/20H01L21/00G03F1/08G03F9/00H01L21/027
CPCG03F7/70633G03F9/7084G03F7/70358G03F9/7076G03F7/70283H01L23/544G03F7/706845G03F7/706847
Inventor J·M·芬德斯M·杜萨R·J·F·范哈伦L·A·C·S·科里纳E·H·J·亨德里克西G·范登伯赫A·H·M·范德霍夫
Owner ASML NETHERLANDS BV
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