Unlock instant, AI-driven research and patent intelligence for your innovation.

Microworking method of miniature electric heating element having micron-level thermoelectric arm

A technology of thermoelectric elements and thermoelectric arms, applied in the manufacture/processing of thermoelectric devices, electrical components, thermoelectric devices, etc., can solve the problems of poor toughness, difficulty in processing micro-thermoelectric devices, and low strength

Active Publication Date: 2005-02-16
TSINGHUA UNIV
View PDF0 Cites 8 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the low strength and poor toughness of thermoelectric materials, mechanical cutting technology is difficult to apply to the processing of micro thermoelectric devices.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Microworking method of miniature electric heating element having micron-level thermoelectric arm
  • Microworking method of miniature electric heating element having micron-level thermoelectric arm
  • Microworking method of miniature electric heating element having micron-level thermoelectric arm

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0015] The invention provides a micro-machining method of a micro-thermoelectric element with a micron-scale thermoelectric arm. The micromachining method of micro-thermoelectric elements with micron-scale thermoelectric arms is to combine the deep ion reactive etching technology of silicon wafers, the micro-mold powder filling technology and the gas pressure melting micro-die-casting technology to prepare P-type and The thermoelectric arm array structure of N-type materials is staggered, and the upper and lower substrates are configured. After the silicon film is removed by semiconductor dry gas etching technology, it is assembled into a thermoelectric element. Its technological process is:

[0016] ①Using deep reactive ion etching to process staggered microhole arrays on both sides of the silicon wafer, which are used as micro-molds for preparing micro-thermoelectric elements;

[0017] ②Fill the fine powders of P-type Bi-Te-Sb alloy and N-type Bi-Te-Sb alloy of thermoelectr...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

Combining depth ionic reaction etching technique for silicon wafer with powder padding technique for minitype mould and minitype die casting technique of air pressure fusion, disclosed method prepares array structure of thermoelectrical arm of P type and N type material in stagger arrangement on same silicon chip at one time. After silicon film being removed by using dry process gas corrosion technique of semiconductor, thermoelectric elements are assembled together with upper and lower base plates arranged. Packing density can reach 10000 pair of P-N junction / cm2. The invention is applicable to mini type thermoelectricity batteries and thermoelectricity freezer based on thermoelectric effect.

Description

technical field [0001] The invention belongs to the technical field of thermoelectric components processing, and in particular relates to a micro-processing method for micro-thermoelectric components with micron-scale thermoelectric arms, including thermoelectric material micro-processing technology and micro-thermoelectric power generation or cooling component micro-processing technology. Background technique [0002] Thermoelectric materials are functional materials that can directly convert heat and electricity into each other. A thermoelectric device made of a thermoelectric material can output electric energy through the Seebeck effect under the condition of a temperature gradient, which is called a thermoelectric battery; The effect can be cooled, which is called a thermoelectric cooling device. Thermoelectric batteries and thermoelectric cooling devices (hereinafter collectively referred to as thermoelectric devices) have simple structures and no mechanical moving pa...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H10N10/00H10N10/01
Inventor 李敬锋
Owner TSINGHUA UNIV