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Laser equipment and laser annealing method

A laser device and laser beam technology, applied in laser welding equipment, electrical components, circuits, etc., can solve the problems of difficult crystal semiconductor films and not reaching the practical level.

Inactive Publication Date: 2005-03-23
SEMICON ENERGY LAB CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0008] However, it is quite difficult to obtain crystalline semiconductor films with sufficiently large grain diameters using currently available techniques
Although some reported results indicate that such crystalline semiconductor films with sufficiently large grain diameters can be experimentally obtained, these reported techniques have not yet reached a practical level.

Method used

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  • Laser equipment and laser annealing method
  • Laser equipment and laser annealing method
  • Laser equipment and laser annealing method

Examples

Experimental program
Comparison scheme
Effect test

specific Embodiment 2

[0105] In this embodiment, a case where an amorphous silicon film is crystallized according to the configuration in Embodiment Mode 1 is described. The laser crystallization process in this specific embodiment is the same as the laser crystallization process in specific embodiment 1, except that a tungsten film is formed on the surface of the reflector 304, and the laser energy density is modified to 369mJ / cm 2 . Please refer to specific embodiment 1 for a detailed description of other conditions.

[0106] According to the SEM photo of the crystallized polysilicon film of this embodiment Figure 11 shown. As in specific example 1, Figure 11 The photos in show the condition after the Secco corrosion treatment. The conditions of the Secco corrosion treatment are the same as those in the specific example 1.

[0107] In order to perform laser crystallization using the configuration in this specific example, the effective energy intensity Io of the first laser beam was set to...

specific Embodiment 3

[0109] In this embodiment, a case where an amorphous silicon film is crystallized according to the configuration in Embodiment Mode 1 is described. The laser crystallization process in this specific embodiment is the same as the laser crystallization process in specific embodiment 1, except that a tungsten oxide film is formed on the surface of the reflector 304, and the laser energy density is modified to 384mJ / cm 2 . Please refer to Example 1 for a detailed description of other conditions.

[0110] According to the SEM photo of the crystallized polysilicon film of this embodiment Figure 12 shown. As in specific example 1, Figure 12 The photos in show the condition after the Secco corrosion treatment. The conditions of the Secco corrosion treatment are the same as those in the specific example 1.

[0111] In order to perform laser crystallization using the configuration in this specific example, the effective energy intensity Io of the first laser beam was set to 172.8...

specific Embodiment 4

[0114] In this embodiment, a method of forming a polysilicon film used as a TFT active layer in accordance with the method described in Embodiment Mode 1 or 2 will be described with reference to FIGS. 13A to 13E.

[0115] Firstly, a silicon oxynitride film (not marked) with a thickness of 200 nm is formed on a glass substrate, and then an amorphous silicon film (not marked) with a thickness of 50 nm is formed thereon. Thereafter, the amorphous silicon film is patterned into island-like patterns 701a and 701b made of amorphous silicon (see FIG. 13A).

[0116] The thus formed island patterns 701a and 701b are then subjected to laser crystallization in accordance with the method described in Embodiment Mode 1 or 2. Island-like patterns 702a and 702b made of polysilicon film obtained by laser crystallization may include smaller crystal grain regions 703a and 703b at their edge / end portions, respectively. Also, the edge / end portions of the island patterns 702a and 702b contain a l...

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Abstract

For crystallizing an amorphous semiconductor film by means of irradiation of laser beams, a top surface and a back surface of the amorphous semiconductor film are irradiated with the laser beams. In this case, an effective energy intensity Io of the laser beams to be applied onto the top surface and an effective energy intensity Io' of the laser beams to be applied onto the back surface satisfy the relationship of 0 H01L 21 / 324 B23K 26 / 00 19 21 3 2000 / 8 / 18 1599040 2005 / 3 / 23 1333446 2007 / 8 / 22 2007 / 8 / 22 2007 / 8 / 22 Semiconductor Energy Lab Japan Kasahara Kenji Kawasaki Ritsuko Otani Hisashi Tanaka Koichiro li yafei liang yong 72001 The Company Ltd. of the Chinese Patent Agency (Hong Kong) Zi Building 22, Yingjun Centre, No.23, Gangwan Road, Hong Kong Wanzi Japan 1999 / 8 / 18 231211 / 99 Japan 1999 / 8 / 31 244204 / 99

Description

technical field [0001] The present invention relates to a method of annealing a semiconductor film using a laser beam (hereinafter referred to as laser annealing) and a set of laser devices for achieving the same (more specifically, a set of devices comprising a laser source and an optical system, wherein the optical The system is used to guide the laser beam emitted from the laser source to the object to be processed). Background technique [0002] In recent years, thin film transistors (hereinafter referred to as TFTs) have been greatly developed, and in particular, TFTs using polysilicon films (polysilicon films) as crystalline semiconductor films have attracted much attention. In particular, in a liquid crystal display device (Liquid Crystal Display) or an EL (Electro Luminescence) display device, these TFTs are used as elements for switching pixels and elements constituting a drive circuit for controlling the pixels. [0003] In a common technique for obtaining a polys...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B23K26/067H01L21/20
CPCB23K26/0676B23K26/0608B23K26/067H01L21/2026H01L21/0262H01L21/02686H01L21/02678H01L21/02488H01L21/02422H01L21/02532H01L21/0242H01L21/02595H01L21/02691H01L21/02675
Inventor 笠原健司河崎律子大谷久田中幸一郎
Owner SEMICON ENERGY LAB CO LTD