At least penta-sided-channel type of finfet transistor and manufacture thereof

Abstract

An at least penta-sided-channel type of FinFET transistor may include: a base; a semiconductor body formed on the base, the body being arranged in a long dimension to have source/drain regions sandwiching a channel region, at least the channel, in cross-section transverse to the long dimension, having at least five planar surfaces above the base; a gate insulator on the channel region of the body; and a gate electrode formed on the gate insulator.

Description

technical field [0001] The invention relates to a channel-type fin field effect transistor with at least five sides and a manufacturing method thereof. Background technique [0002] The need to reduce the size of transistors is a constant problem in integrated circuit technology. One method that the prior art has used to reduce the size of transistors is to reduce the length of the channel. Doing so effectively reduces the overall transistor area. However, after reaching the minimum channel length (relative to other physical parameters of the transistor), it will bring some problems, such as short channel effect. [0003] The state of the art has responded to this by developing transistor architectures that reduce transistor area while maintaining at least a minimum channel length. This solution can be explained by the analogy of the inchworm. Figures 5A-5B A side view of the stages to illustrate the unique locomotion pattern used by the inchworm 602. exist Figure 5A ...

AI Technical Summary

Problems solved by technology

Despite many attempts, the prior art has not developed a technique for removing material from the right corners of tri-gate FinFET 700 (or its dual-gate version) without irreversibly damaging fin 702b. the remainder of the or cause its uneven width

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