Unlock instant, AI-driven research and patent intelligence for your innovation.

In-situ local heating using megasonic transducer resonator

A resonator, transducer technology, applied in the directions of cleaning methods using liquids, cleaning methods and utensils, chemical instruments and methods, etc., can solve problems such as banding effects

Inactive Publication Date: 2005-08-17
LAM RES CORP
View PDF0 Cites 16 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Banding can also occur due to the difficulty in providing complete cleaning coverage of the entire wafer surface by the small coverage area of ​​the fluid stream

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • In-situ local heating using megasonic transducer resonator
  • In-situ local heating using megasonic transducer resonator
  • In-situ local heating using megasonic transducer resonator

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0028] Several exemplary embodiments of the present invention will now be described in detail by referring to the accompanying drawings. Figures 1A, 1B and 1C have been discussed above in the "Background" section.

[0029] Embodiments of the present invention provide apparatus and methods for cleaning semiconductor substrates with a megasonic cleaning device, wherein the cleaning device simultaneously provides localized heating and acoustic energy to clean the semiconductor substrate. Localized heating allows raising the temperature of liquids disposed over the top surface of the substrate, such as cleaning chemicals used in single wafer cleaning operations. Accordingly, cleaning chemicals used in single wafer cleaning operations may be heated to increase the activity and effectiveness of the cleaning chemicals. The increased activity combined with the cleaning mechanism of the megasonic cleaner provides improved throughput of the cleaning operation because less time is spent...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

An apparatus for cleaning a semiconductor substrate is provided. In embodiment of the present invention, a megasonic cleaner capable of providing localized heating is provided. The megasonic cleaner includes a transducer and a resonator. The resonator is configured to propagate energy from the transducer. The resonator has a first and a second end, the first end is operatively coupled to the transducer and the second end is configured to provide localized heating while propagating the energy from the transducer. A system for cleaning a semiconductor substrate through megasonic cleaning and a method for cleaning a semiconductor substrate is also provided.

Description

technical field [0001] The present invention relates generally to surface cleaning, and more particularly to methods and apparatus for megasonic cleaning of semiconductor substrates following fabrication processes. Background technique [0002] Megasonic cleaning is widely used in semiconductor manufacturing operations and can be applied to batch cleaning processes or single wafer cleaning processes. For batch cleaning processes, the vibration of a megasonic transducer generates acoustic pressure waves in the liquid of a cleaning tank containing a batch of semiconductor substrates. Single wafer megasonic cleaning processes use a relatively small transducer above a rotating wafer with the transducer scanned across the wafer, or in the case of full immersion a single wafer chamber system. In each case, the primary particle removal mechanisms by megasonic cleaning were due to cavitation and acoustic flow. Cavitation is the rapid formation and collapse of microbubbles in a liq...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/304B08B3/02B08B3/10B08B3/12H01L21/00H01L21/306
CPCB08B3/10B08B3/02B08B2203/0288B08B3/12H01L21/67051Y10S134/902H01L21/02052B08B17/02B08B7/04H01L21/304
Inventor J·M·博伊德K·米克海利希
Owner LAM RES CORP