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Method for forming film pattern, method for manufacturing device, electro-optical apparatus, and electronic apparatus

A manufacturing method and technology for optoelectronic devices, which are applied in the fields of semiconductor/solid-state device manufacturing, conductive pattern formation, printing devices, etc., can solve the problem of high manufacturing cost, achieve the effect of thinning lines and preventing deterioration of device characteristics

Inactive Publication Date: 2005-10-12
SEIKO EPSON CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This photolithography method requires large-scale equipment such as a vacuum device and complicated processes. In addition, the efficiency of material use is on the order of a few percent, so almost all materials have to be discarded, and the manufacturing cost is high.

Method used

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  • Method for forming film pattern, method for manufacturing device, electro-optical apparatus, and electronic apparatus
  • Method for forming film pattern, method for manufacturing device, electro-optical apparatus, and electronic apparatus
  • Method for forming film pattern, method for manufacturing device, electro-optical apparatus, and electronic apparatus

Examples

Experimental program
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Effect test

experiment example 1

[0160] To form the receiving film 36, the functional liquid LQ1 containing conductive fine particles is placed in the groove portion 34 by a liquid discharge method, and then the functional liquid LQ1 in the groove portion 34 is dried under a plurality of drying conditions to optimize the drying conditions. Drying conditions are: (1) Naturally placed for about 24 hours, (2) heated at 60°C for about 5 minutes, (3) heated at 120°C for about 5 minutes, (4) heated at 180°C for about 60 minutes, (5) heated at 200°C for 60 minutes Minutes or so, (6) 250 ℃ heating for 60 minutes or so.

[0161] Figure 7A shows the experimental results. FIG. 7A shows a table of experimental results, and FIG. 7B shows the result of converting FIG. 7A into a graph.

[0162] In FIGS. 7A and 7B , when the functional liquid LQ2 is placed on the receptor film 36 formed under the above conditions (1) to (4), cracks are generated in the receptor film 36 . In addition, when the functional liquid LQ2 is dispo...

experiment example 2

[0163] Porous silica was used as a material for forming the receiving film 36 . In addition, as a material for forming the wiring pattern 33, an organic silver compound is used. After the droplet of the functional liquid containing porous silica is discharged into the groove portion 34 by the droplet discharge head 1, heat treatment is performed by heating at 300° C. for about 60 minutes. Among them, the ejection conditions when ejecting droplets of the functional liquid containing porous silica were set at a droplet volume of 4 pL and a droplet flying speed of 5 to 7 m / sec. As a result, the receiving film 36 made of porous silica was formed in the groove portion 34 . Then, after discharging droplets of the functional liquid containing an organic silver compound from the droplet discharge head 1 on the receiving film 36, heat treatment is performed by heating at 200° C. for about 60 minutes. Thus, the wiring pattern 33 can be formed in the groove portion 34 .

[0164] (Meth...

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Abstract

A film pattern formation method comprises a step of forming banks in compliance with film patterns on a substrate, a process of forming an accepting film having acceptability with respect to a functional liquid in a groove between the banks, and a process of arranging the functional liquid on the accepting film.

Description

field of invention [0001] The invention relates to a method for forming a film pattern, a method for manufacturing a device, a photoelectric device and electronic equipment, and a method for manufacturing an active matrix substrate. Background technique [0002] For example, photolithography is used in the fabrication of devices such as wired electronic circuits and integrated circuits. The photolithography method is: apply a photosensitive material called resist to a substrate coated with a conductive film in advance, irradiate the circuit pattern to develop it, etch the conductive film through the corresponding resist pattern to form a wiring pattern . This photolithography method requires large-scale equipment such as a vacuum device and complicated processes. In addition, the efficiency of material use is on the order of a few percent, and almost all materials have to be discarded, resulting in high manufacturing costs. [0003] In this regard, in the US Patent No. 513...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G02F1/1343G02F1/1362G02F1/1368G09F9/00G09F9/30H01L21/00H01L21/28H01L21/288H01L21/3205H01L21/336H01L21/77H01L27/12H01L29/786H05B33/10H05B33/12H05B33/14H05B33/22H05K3/00H05K3/12H10K99/00
CPCH01L27/12G02F2001/136295H01L51/0004H05K3/1241H01L27/1214H01L27/1292G02F1/136295H10K71/13B41M1/06
Inventor 平井利充
Owner SEIKO EPSON CORP