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Magnetoresistance effect film and method of manufacturing the same

A technology of magnetoresistance and effect, which is used in the manufacture/processing of magnetic field controlled resistors, electromagnetic devices, and the manufacture of magnetic flux sensitive magnetic heads, which can solve the problem of low resolution of reading elements.

Inactive Publication Date: 2005-10-19
FUJITSU LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Therefore, the resolution of the read element must be lower

Method used

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  • Magnetoresistance effect film and method of manufacturing the same
  • Magnetoresistance effect film and method of manufacturing the same
  • Magnetoresistance effect film and method of manufacturing the same

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Embodiment Construction

[0021] Preferred embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

[0022] Figure 1 shows the configuration of a GMR film produced by the method of the present invention. 1 represents the top layer; 2 represents the reflection layer, 3 represents the back layer, 4 represents the free layer, 5 represents the middle layer, 6 represents the pinning layer, 7 represents the antiferromagnetic layer, and 8 represents the seed layer. It should be noted that the configuration from the back layer 3 to the seed layer 8 is the same as that of the conventional GMR film shown in FIG. 4 . This embodiment is characterized by a top layer 1 and a reflective layer 2 , in particular a reflective layer 2 .

[0023] In this embodiment, for example, the seed layer 8 is made of NiCr; the antiferromagnetic layer 7 is made of PdPtMn; the pinning layer 6 is made of CoFe / Ru / CoFe; the intermediate layer 5 is made of Cu; the free layer 4 ...

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Abstract

The present invention relates to a magnetoresistance effect film that is capable of shortening the time of ion mill treatment and improving the resolution of a read-element. The magnetoresistance effect film includes a protection layer, which protects a magnetic layer and which is constituted by a specular layer and a cap layer. The specular layer and cap layer are made of the same metallic material, and the metallic material of said specular layer is oxidized.

Description

technical field [0001] The present invention relates to a magnetoresistance effect film and a method for manufacturing the magnetoresistance effect film, in particular to a magnetoresistance effect film capable of shortening ion mill processing time and improving the resolution of a reading element and a manufacturing method thereof . Background technique [0002] FIG. 4 shows the configuration of a conventional GMR (giant magnetoresistance) film which is an example of a magnetoresistance effect film used in a magnetoresistance effect element. It consists of a seed layer 8, an antiferromagnetic layer 7, a pinned layer 6, an intermediate layer 5, a free layer 4, a back layer 3, and a specular layer 2 and a cap layer (cap layer) 1 are sequentially laminated to form a GMR film. [0003] Various GMR films were used. For example, the seed layer 8 is made of NiCr, the antiferromagnetic layer 7 is made of PdPtMn, the pinning layer 6 is made of CoFe / Ru / CoFe, the intermediate laye...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01F10/32G01R33/09G11B5/127G11B5/33G11B5/39H01F41/32H01L43/08H01L43/12
CPCB82Y25/00G01R33/093G11B5/39
Inventor 河合宪一
Owner FUJITSU LTD