Structure of forming pressure contact with power semiconductor module

Abstract

Power semiconductor module with a pressure contact comprises circuit board (100), cooling body (300b) and a semiconductor power module (200) with an insulated plastic housing (210) and cover (212) with recesses. A second cover has a substrate (230) with semiconductor elements (240) and contact spring connections with reversible or permanent connections.

Description

technical field [0001] The present invention describes a structure that makes pressure contact with a very compact power semiconductor module. DE 19630173 C2 or DE 19924993 C2 discloses a modern design of such a power semiconductor module with high power relative to its size, which is the starting point of the present invention. Background technique [0002] DE19630173C2 discloses a power semiconductor module for direct mounting on a cooling device, which consists of a housing and an electrically insulating base plate, the base plate being an insulating material body with a plurality of mutually insulated metal conductive strips thereon and an insulating material body located on the insulating Power semiconductor components on a body of material and in circuit connection with these conductive strips. The external electrical connection to the busbars of the circuit board outside the housing is made by means of contact springs. [0003] The power semiconductor module also ha...

AI Technical Summary

Problems solved by technology

[0006] The disadvantage of this power semiconductor module structure is that two different joining processes are required to integrate the module into a mounting structure (screw connection and soldering, which have to be carried out in several steps)

A major disadvantage is that the contact reliability of soldered connections cannot be guaranteed over a long period of use

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