Discharging solution, method for producing patterns and method for producing an electronic device using the discharging solution, and electronic device
A pattern and solution technology, applied in transportation and packaging, electrical components, printed circuits, etc., can solve complex, high-cost, multi-step problems
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[0072] According to the preparation method of the pattern of the present invention, the above-mentioned output solution of the present invention (that is, a solution having a surface tension of 20 dyne / cm or more in which organic molecules having a fluoroalkyl chain are dissolved as the second A pattern forming material) is output onto the surface of the substrate for drawing, and the solvent contained in the output solution is evaporated, thereby forming a pattern containing organic molecules. The method for preparing a pattern of the present invention may also be referred to as a method for forming a pattern. However, assuming that the drawing itself is a product, this method will be called a preparation method of the drawing. Similarly, in this specification, "forming a pattern" is also described as "preparing a pattern".
[0073] For example, if Figure 11 As shown, an inkjet device 51 can be used to output the solution 2 onto the surface of the substrate 1 for drawing. ...
Embodiment 1
[0165] In Example 1, a silicon wafer was used as a substrate, and a hydrophobic pattern was formed on the surface of the silicon wafer.
[0166] -Preparation of matrix-
[0167] A silicon wafer (thickness: 200 μm; diameter: 100 mm) with a thermally grown oxide film was immersed in a mixed solution (80° C.) of ammonia water and hydrogen peroxide solution for 30 minutes. After that, the silicon wafer is washed with pure water to remove dirt such as organic substances and inorganic substances attached to the surface of the silicon wafer. Then, the moisture adhering to the silicon wafer was removed with nitrogen gas, and then, the silicon wafer was irradiated with ultraviolet rays at 110° C. for 15 minutes in an ozone atmosphere, thereby completely removing organic matter contamination. The surface of the above-treated silicon wafer was completely wetted with water and confirmed to be clean.
[0168] -Preparation of output solution-
[0169] A dehydrating agent ("molecular siev...
Embodiment 2
[0187] In the same manner as in Example 1, a solution containing an organic molecule having a fluoroalkyl chain was exported to a silicon wafer for evaluation. The output solution was prepared by dissolving 1% by volume of heptadecafluoroethyltrimethoxysilane (CF 3 (CF 2 ) 7 C 2 h 4 Si(OCH 3 ) 3 ; hereafter, it is also referred to as "FAS") as an organic molecule having a fluoroalkyl chain, and 2 ml of 1N hydrochloric acid was added to 100 ml of the above-prepared solution, followed by stirring for 1 hour. The surface tension of the prepared output solution (FAS solution) was 32 dynes / cm. Moreover, the relative humidity of the environment for preparing the FAS solution and the environment for outputting the FAS solution is adjusted to within the range of 20%-50%, and there is no special control.
[0188] Example 1 is different.
[0189] A pattern similar to that of Example 1 was formed and evaluated. Next, the same results as in Example 1 were obtained. More specific...
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