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Light emitting device and method of manufacturing the same

A technology of light-emitting devices and light-emitting structures, applied in lasers, semiconductor devices, phonon exciters, etc., can solve the problems of optical signal loss, signal deterioration, etc.

Inactive Publication Date: 2007-01-24
AVAGO TECH ECBU IP (SINGAPORE) PTE LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For example, lossy properties of semiconductor materials used in buffer layers formed close to the substrate lead to loss of optical signal and degradation of signal
Substrate further causes optical signal loss

Method used

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  • Light emitting device and method of manufacturing the same
  • Light emitting device and method of manufacturing the same
  • Light emitting device and method of manufacturing the same

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Embodiment Construction

[0015] Various embodiments generally relate to a light emitting device having a light emitting structure to which a light guiding element is attached. In one exemplary embodiment, the light emitting structure is a light emitting source fabricated using a metal organic vapor phase epitaxy (MOVPE) process. The attached light guiding elements are manufactured using a different process than MOVPE. The MOVPE process allows the light-emitting structure to be optimized for optical and mechanical properties, while another process allows the light-guiding element to be optimized independently of the light-emitting structure.

[0016] figure 2 An exemplary embodiment of a light emitting device 200 is shown, which in this embodiment is a VCSEL, having a light emitting structure 250 comprising an active layer 210 composed of a GaN-based compound. In an exemplary embodiment, the GaN-based compound is composed of In x al y Ga 1-x-y N (1≥X≥0; 1≥y≥0; 1≥x+y≥0). The active layer 210 is s...

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PUM

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Abstract

A light emitting device is manufactured by forming a light emitting structure upon a buffer layer formed on a substrate. The light emitting structure is then separated from the buffer layer and the substrate. A light-directing element such as a mirror or a lens is then attached to the light emitting structure using a bonding agent.

Description

technical field [0001] The invention relates to a light emitting device and a manufacturing method. Background technique [0002] It is desirable to fabricate devices including light-emitting layers and passive optical elements such as mirrors or lenses in GaN material systems. One example is a GaN vertical cavity surface emitting laser (VCSEL) with top and bottom Bragg reflector (DBR) type mirrors. The GaN material system presents challenges for fabricating such devices using epitaxial growth. [0003] For example, note the paper titled "An optically pumped GaN-AlGaN vertical cavity surface emitting laser" by Joan M. Redwing, David A.S. Loeber, Neal G. Anderson, Michael A. Tischler, and Jeffrey S. Flynn, which describes a A VCSEL structure incorporating a reflector stack. VCSEL structures were grown on sapphire substrates by metal organic vapor phase epitaxy (MOVPE). [0004] as disclosed figure 1 As shown in , this prior art VCSEL comprises an active layer sandwiched ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00H01L33/46
CPCH01S2304/04H01S5/18388H01S5/0217H01L33/465H01L33/0079H01S5/32341H01S5/0216H01L33/0093
Inventor 维金奈·M·罗宾斯史蒂文·D·莱斯特尔
Owner AVAGO TECH ECBU IP (SINGAPORE) PTE LTD