Unlock instant, AI-driven research and patent intelligence for your innovation.

Chemomechanical grinder and its grinding pad regulating method

An adjustment method and technology of a grinding device, which are applied in the directions of grinding devices, grinding machine tools, electrical components, etc., can solve the problems such as the limited adjustment effect of the grinding pad 120, and achieve the effect of improving the grinding effect.

Active Publication Date: 2007-03-21
UNITED MICROELECTRONICS CORP
View PDF0 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, only the adjustment action of providing chemical liquid to the polishing pad 120 from the polishing pad regulator 150 has limited effect on the adjustment of the polishing pad 120

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Chemomechanical grinder and its grinding pad regulating method
  • Chemomechanical grinder and its grinding pad regulating method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0042] FIG. 2 is a schematic diagram of a chemical mechanical polishing device in a preferred embodiment of the present invention. Referring to FIG. 2 , the chemical mechanical polishing device 200 of this embodiment at least includes a polishing disc 210 , a polishing pad 220 , a polishing fluid supply pipeline 230 , a polishing pad regulator 250 , a chemical fluid supply pipeline 260 and a distribution pipeline 280 .

[0043] Please refer to FIG. 2, the grinding disc 210 is arranged on a carrying machine (not shown), and the grinding disc 210 is driven to rotate through the carrying machine (not shown), and the grinding pad 220 is arranged on the grinding disc 210, and the grinding pad 220 rotates simultaneously with the grinding disc 210 to remove the layer to be ground.

[0044] Please continue to refer to FIG. 2 , there are multiple grinding liquid outlets 212 on the surface of the grinding disc 210 , and the grinding liquid supply pipeline 230 is connected to the bottom ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The chemomechanical grinder includes at least one grinding pan, one grinding pad, one grinding fluid supplying pipeline, one grinding pad regulator, one chemical fluid supplying pipeline and one dividing pipeline. The grinding disc has grinding fluid outlets in the surface and grinding pad configured on it. The grinding pad regulator is configured over the grinding pad, and the chemical fluid supplying pipeline is connected to the grinding pad regulator for supplying chemical grinding fluid to the regulator. The dividing pipeline is connected between the grinding fluid supplying pipeline and the chemical fluid -supplying pipeline for supplying the grinding fluid and the chemical fluid to the surface of the grinding pad. The chemomechanical grinder has excellent grinding effect.

Description

technical field [0001] The invention relates to a chemical mechanical polishing (CMP) device, in particular to a chemical mechanical polishing device suitable for providing a good polishing effect and a method for adjusting a polishing pad thereof. Background technique [0002] As the device size continues to shrink, the lithography exposure resolution needs to be improved accordingly. And with the reduction of the exposure depth of field, the requirements for the tolerance of the high and low contours of the chip surface will be more stringent. Chemical mechanical polishing is currently a technology that can provide comprehensive planarization of VLSI processes. Its anisotropic abrasive properties can not only be used for the planarization of chip surface contours, but also can be applied to vertical and horizontal through metal polishing. The production of metal wire connections (Interconnects), or the production of shallow trench isolation of components in the front-end ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): B24B37/04H01L21/304
Inventor 陈胜裕洪德松成忠荣郑锜彪郑博元
Owner UNITED MICROELECTRONICS CORP