Method and apparatus for annealing copper films
a technology of copper film and annealing method, which is applied in the direction of conveyor parts, transportation and packaging, semiconductor devices, etc., can solve the problems of affecting the behavior of subsequent chemical mechanical polishing (cmp), affecting the resistivity, stress and hardness of films, and forming stress-induced voids
Inactive Publication Date: 2007-06-07
APPLIED MATERIALS INC
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Problems solved by technology
For example, abnormal grain growth may occur in the as-deposited film such that film properties such as resistivity, stress and hardness may be adversely affected.
These continual changes in microstructure at room temperature may lead to formation of stress-induced voids, or affect subsequent chemical mechanical polishing (CMP) behavior because of varying polishing rates for the film.
Typically, copper films are annealed in a high temperature furnace or using rapid thermal anneal processing, both of which require relatively expensive and complex equipments.
Furnace anneal of electroplated copper films, for example, is a batch process that is performed at an elevated temperature of typically about 400° C., either under a vacuum or in a nitrogen environment for at least about 30 minutes, which is a rather high thermal budget, time-consuming and costly process.
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[0021] The method of the present invention performs annealing of a copper layer by exposing the copper layer to an annealing gas environment at an elevated temperature.
[0022] In one embodiment of the invention, the annealing is performed in-situ—i.e., within the same apparatus as that used for depositing the copper layer. The annealing gas environment comprises a gas selected from nitrogen (N2), argon (Ar) or helium (He), or other inert gases. Annealing is performed at a temperature between about 100 and about 500° C. for a time duration less than about 5 minutes. In another embodiment, the annealing gas environment further comprises hydrogen (H2), preferably a mixture of less than about 5% of H2 in N2 or other inert gas. In another aspect of the invention, the annealing gas environment preferably has an oxygen concentration of less than about 100 parts per million (ppm), more preferably less than about 30 ppm. By exposing the copper layer to the annealing gas environment within a ...
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Abstract
A method and apparatus for annealing copper. The method comprises forming a copper layer by electroplating on a substrate in an integrated processing system and annealing the copper layer in a chamber inside the integrated processing system.
Description
CROSS-REFERENCE TO RELATED APPLICATIONS [0001] This application is a continuation of co-pending U.S. patent application Ser. No. 10 / 611,589 (APPM / 001717.D2), filed Jun. 30, 2003, which application is a divisional of U.S. patent application Ser. No. 09 / 513,734 (APPM / 001717.P2), filed Feb. 18, 2000, which is a continuation-in-part of commonly-assigned U.S. patent application Ser. No. 09 / 396,007 (APPM / 001717.P1), filed on Sep. 15, 1999, now U.S. Pat. No. 6,276,072, and of U.S. patent application Ser. No. 09 / 263,126 (APPM / 003421), filed on Mar. 5, 1999, now U.S. Pat. No. 6,136,163, all of which are herein incorporated by reference.BACKGROUND OF THE INVENTION [0002] 1. Field of the Invention [0003] The invention relates to a method and apparatus for metal processing and, more particularly, to a method and apparatus for depositing and annealing metal films. [0004] 2. Background of the Related Art [0005] Copper has gained increasing popularity as a metal interconnect in advanced integrated...
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IPC IPC(8): H01L21/44C22F1/02C22F1/08C25D7/12H01L21/00H01L21/677H01L21/768
CPCC22F1/02C22F1/08C25D5/48C25D5/50H01L21/67098H01L21/67103H01L21/67109H01L21/6723H01L21/76838H01L21/7684H01L21/76886C25D7/123
Inventor CHEN, B. MICHELLESHIN, HO SEONDORDI, YEZDIMORAD, RATSONCHEUNG, ROBIN
Owner APPLIED MATERIALS INC