Polishing head and chemical mechanical polishing process using the same
a technology of chemical mechanical polishing and polishing head, which is applied in the direction of grinding/polishing apparatus, grinding machines, manufacturing tools, etc., can solve the problems of varying the removal rate over the surface of the wafer, the way of applying pressure is not satisfying, and the use of floating pressure to adjust the backside pressure applied to the polishing head cannot be easily achieved
Inactive Publication Date: 2009-02-05
WINBOND ELECTRONICS CORP
View PDF5 Cites 4 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Benefits of technology
[0006]The present invention is directed to a polishing head that does not require consumable materia
Problems solved by technology
During the chemical mechanical polishing process, due to the limitations of the device structures, the pressure applied to the polishing head is not uniform across the whole polishing head, causing varying removal rate over the surface of the wafer.
However, using floating pressure to adjust the backside pressure applied to the polishing head cannot be easily achieved because air pressure control is unstable.
Hence, this way of applying pressure does not provide sat
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Login to View More PUM
| Property | Measurement | Unit |
|---|---|---|
| Length | aaaaa | aaaaa |
| Length | aaaaa | aaaaa |
| Length | aaaaa | aaaaa |
Login to View More
Abstract
A polishing head for a chemical mechanical polishing process is provided. The polishing head includes an inner circle part and an outer circle part. The outer circle part is a ring-like structure that is connected to the inner circle part. The inner circle part and the outer circle part are an integrated structure. There is a level difference between the respective surfaces of the outer circle part and the inner circle part. Further, the surface of the outer circle part is higher than that of the inner circle part.
Description
BACKGROUND OF THE INVENTION[0001]1. Field of the Invention[0002]The present invention relates to an integrated circuit device, a method for fabricating the same, and its application. More particularly, the present invention relates to a polishing head, a method for fabricating the same and a chemical mechanical polishing (CMP) process that utilizes the polishing head.[0003]2. Description of Related Art[0004]In semiconductor fabrication techniques, the principle behind chemical mechanical polishing (CMP) is similar to the mechanical principle behind knife grinding. The process works in conjunction with an appropriate chemical reagent to planarize the uneven topography of the wafer on the polishing pad. Generally, in a chemical mechanical polishing device, a wafer is usually held by a polishing head and the wafer is pressed against the polishing pad face down and the polishing pad is supplied with slurry for polishing. During the chemical mechanical polishing process, due to the limit...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More IPC IPC(8): B24B1/00
CPCB24B37/30B24B37/27
Inventor YANG, TE-TAILIU, KUO-JULEE, YUN-HAI
Owner WINBOND ELECTRONICS CORP



