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Thin film transistor, method of fabricating thin film transistor and pixel structure

Inactive Publication Date: 2012-02-16
AU OPTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0009]The invention is further directed to a TFT and a pixel structure having the TFT, and the TFT of the invention has a structure capable of preventing short circuit occurring in elements of the TFT.

Problems solved by technology

If the CD of the photoresist patterns is excessively large, cross-talk effects are likely to occur in the devices.
By contrast, if the CD of the photoresist patterns is overly small, the devices may encounter issues of excessive resistance value, broken lines, or short circuit.

Method used

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  • Thin film transistor, method of fabricating thin film transistor and pixel structure
  • Thin film transistor, method of fabricating thin film transistor and pixel structure
  • Thin film transistor, method of fabricating thin film transistor and pixel structure

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Experimental program
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first embodiment

[0024]FIG. 2A to FIG. 2C are schematic cross-sectional views illustrating a process of fabricating a TFT according to an embodiment of the invention. With reference to FIG. 2A, in a method of fabricating the TFT according to this embodiment, a substrate 100 is provided, and a gate G, an insulating layer 102, and a channel layer CH are already formed on the substrate 100. According to an embodiment of the invention, an ohmic contact layer OM is further formed on the channel layer CH.

[0025]The substrate 100 can be made of glass, quartz, organic polymer, a non-light-transmissive / reflective material (such as a conductive material, wafer, ceramics, or the like), or other suitable materials.

[0026]The gate G is formed on the substrate 100. The gate G is formed by depositing a conductive material layer on the substrate 100 and patterning the conductive material layer by performing a photolithography and etching process, for instance. In consideration of conductivity, the gate G is typically...

second embodiment

[0037]FIG. 4 is a schematic top view illustrating a pixel structure according to an embodiment of the invention. FIG. 5 is a schematic enlarged view of an area marked as “300” in FIG. 4. With reference to FIG. 4 and FIG. 5, the pixel structure of this embodiment includes a data line DL, a first scan line SL1, a second scan line SL2, a first TFT T1, a second TFT T2, a third TFT T3, a main pixel electrode PE1, and a sub-pixel electrode PE2.

[0038]The first scan line SL1 and the second scan line SL2 are parallel. The data line DL and the first and second scan lines SL1 and SL2 are alternately arranged. An insulating layer is sandwiched between the data line DL and the first and second scan lines SL1 and SL2. In other words, an extending direction of the data line DL is not parallel to extending directions of the first and second scan lines SL1 and SL2. Preferably, the extending direction of the data line DL is perpendicular to the extending directions of the first and second scan lines ...

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Abstract

A method of fabricating a TFT includes providing a substrate where a gate, an insulating layer, and a channel layer are formed. A conductive layer is formed on the substrate to cover the channel layer and the insulating layer. A photoresist layer is formed on the conductive layer. A photo mask is placed above the photoresist layer and has a data line pattern, a source pattern, and a drain pattern. A first width (W1) between the source pattern and the drain pattern and a second width (W2) of the data line pattern satisfy the following: if W1−1(um), then W2+a(um), and 0.3<a<0.7. An exposing process is performed by using the photo mask, and a development process is performed to pattern the photoresist layer. The conductive layer is patterned by using the photoresist layer as an etching mask to form a source, a drain, and a data line.

Description

CROSS-REFERENCE TO RELATED APPLICATION[0001]This application claims the priority benefit of Taiwan application serial no. 99127301, filed on Aug. 16, 2010. The entirety of the above-mentioned patent application is hereby incorporated by reference herein and made a part of this specification.BACKGROUND OF THE INVENTION[0002]1. Field of the Invention[0003]The invention relates to a thin film transistor (TFT), a method of fabricating a TFT, and a pixel structure.[0004]2. Description of Related Art[0005]The increasing progress of display technologies brings about great conveniences to people's daily lives. As such, flat panel displays (FPDs) featuring compactness become the main stream display products at present. Among various types of FPDs, liquid crystal displays (LCDs) have superb characteristics, such as high space utilization efficiency, low power consumption, no radiation, and low electromagnetic interference, so that the LCDs have been prevailing. TFTs are often applied to the d...

Claims

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Application Information

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IPC IPC(8): H01L33/16H01L29/786H01L21/336
CPCH01L27/1214H01L29/41733H01L29/66765H01L29/66742H01L27/124H01L27/1288H01L33/16
Inventor WU, HUANG-CHUNTSENG, SHINE-KAI
Owner AU OPTRONICS CORP