Methods for self-aligned self-assembled patterning enhancement

Abstract

Methods for producing self-aligned, self-assembled sub-ground-rule features without the need to use additional lithographic patterning. Specifically, the present disclosure allows for the creation of assist features that are localized and self-aligned to a given structure. These assist features can either have the same tone or different tone to the given feature.

Description

BACKGROUND OF THE INVENTION[0001]1. Technical Field[0002]The invention relates generally to micro-scale or nano-scale device fabrication, and more particularly, to methods for forming a mask with self-aligned, self-assembled sub-lithographic features.[0003]2. Background Art[0004]A mask is a glass or quartz plate containing information about the features to be printed on a semiconductor wafer. This information is contained in variations in the plate that create differences in topography, transmittance or phase. The mask is used as a master template to transfer design images onto a wafer either through exposure to radiation (lithography) or through direct contact (nanoimprint). The mask is an intermediate step created to transfer the design to the wafer image, so the mask features are adjusted to create the desired wafer image.[0005]A simple form of altering the mask data is to change the size or shape of the mask feature so that the printed wafer feature size matches the desired feat...

AI Technical Summary

Benefits of technology

[0006]This disclosure presents methods for producing self-aligned, self-assembled sub-ground-rule features without the need to use additional lithographic patterning. Specifically, the present disclosure allows for the creation of assist features that are localized and self-aligned to a given structure. These assist features can either have the same tone or different tone to the given feature.

Problems solved by technology

These small features challenge the resolution of the standard mask fabrication process.

If small features are desired in a different material from the main feature, 1st- to -2nd pass pattern alignment is inadequate.

These features also consume time in many ways.

The larger the data file size of the mask data, the slower the transfer of data, the slower the fracturing of the data into write-ready form, and the slower the mask fabrication process.

If a problem is found with the sub resolution feature placement or size, the entire data processing sequence must be initiated again.

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