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Semiconductor apparatus

a semiconductor and apparatus technology, applied in the direction of electric variable regulation, process and machine control, instruments, etc., can solve the problems of high probability of semiconductor apparatus malfunction

Active Publication Date: 2017-08-31
SK HYNIX INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

This patent is about a semiconductor apparatus that includes a detection circuit, a code generation circuit, a reference voltage generation circuit, an internal voltage generation circuit, and an internal circuit. The detection circuit generates two detection voltages that vary depending on the characteristics of PMOS and NMOS transistors. The code generation circuit generates a detection code based on the voltage levels of the detection voltages. The reference voltage generation circuit generates a reference voltage based on the detection code. The internal voltage generation circuit generates an internal voltage based on the reference voltage. The internal circuit operates based on the internal voltage. The technical effects of this patent are improved accuracy and efficiency in detecting the voltage levels of PMOS and NMOS transistors and in generating the corresponding detection code and reference voltage, which can improve the performance and reliability of semiconductor apparatuses.

Problems solved by technology

Accordingly, even when characteristics of the semiconductor apparatus are changed according to temperature, voltage, and process changes, since the semiconductor apparatus only operates using a preset voltage level, it is highly likely that the semiconductor apparatus will malfunction.

Method used

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BRIEF DESCRIPTION OF THE DRAWINGS

[0012]The above and other aspects, features and other advantages of the subject matter of the present disclosure will be more clearly understood from the following detailed description taken in conjunction with the accompanying drawings, in which:

[0013]FIG. 1 is a configuration diagram illustrating a semiconductor apparatus according to an embodiment of the inventive concept;

[0014]FIG. 2 is a configuration diagram illustrating a detection voltage generation circuit of FIG. 1;

[0015]FIG. 3 is a configuration diagram illustrating a code generation circuit of FIG. 1; and

[0016]FIG. 4 is a configuration diagram illustrating a semiconductor apparatus according to an embodiment of the inventive concept.

[0017]FIG. 5 illustrates a block diagram of an example representation of a system employing a semiconductor device in accordance with the various embodiments discussed above with relation to FIGS. 1-4.

DETAILED DESCRIPTION

[0018]Hereinafter, example embodiment...

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Abstract

A semiconductor apparatus includes a detection voltage generation circuit configured to generate a first detection voltage and a second detection voltage of which voltage levels are varied according to characteristics of a PMOS transistor and an NMOS transistor in response to a detection enable signal, a code generation circuit configured to generate a detection code in response to the voltage levels of the first and second detection voltages, a reference voltage generation circuit configured to generate a reference voltage in response to the detection code, an internal voltage generation circuit configured to generate an internal voltage in response to the reference voltage, and an internal circuit configured to operate by receiving the internal voltage.

Description

CROSS-REFERENCES TO RELATED APPLICATION[0001]This application claims priority under 35 U.S.C. 119(a) to Korean application No. 10-2016-0023582, filed on Feb. 26, 2016, in the Korean intellectual property Office, which is incorporated by reference in its entirety as set forth in full.BACKGROUND[0002]1. Technical Field[0003]The inventive concept relates to a semiconductor integrated circuit, and more particularly, to a semiconductor apparatus.[0004]2. Related Art[0005]Semiconductor apparatuses may be constructed of transistors and operate by receiving a voltage from the outside thereof. The semiconductor apparatuses may generate an internal voltage having a desired voltage level by receiving a voltage from outside the semiconductor and use the generated voltage inside the semiconductor.[0006]The characteristics of a semiconductor apparatus configured of transistors may be changed according to temperature, voltage, and process changes.[0007]The semiconductor apparatus may operate by re...

Claims

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Application Information

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IPC IPC(8): G05F1/46
CPCG05F1/468
Inventor LEE, HYENG OUKCHO, YONG DEOK
Owner SK HYNIX INC