Semiconductor device
a semiconductor and semiconductor technology, applied in the direction of semiconductor devices, radiation controlled devices, electrical equipment, etc., can solve the problems of difficult use of the passivation layer of silicon nitride for a semiconductor device, undesired angle of light entering the semiconductor device, etc., and achieve the effect of improving the sensitivity of a photodiod
Inactive Publication Date: 2011-09-13
LAPIS SEMICON CO LTD
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Benefits of technology
[0005]It is an object of the present invention is to provide a semiconductor device in which the sensitivity of a photodiode can be improved by controlling an entrance direction of input light to the photodiode.
Problems solved by technology
Therefore, a passivation layer of a silicon nitride is difficult to use for a semiconductor device including a photodiode, which operates in response to a light supplied from an external device.
On the other hand, if a passivation layer having a high permeability is formed over the semiconductor device, a light may be entered into the semiconductor device from undesired angles.
Method used
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[0011]In the following detailed description of the preferred embodiments, reference is made to the accompanying drawings which form a part hereof, and in which is shown by way of illustration specific preferred embodiments in which the inventions may be practiced. These preferred embodiments are described in sufficient detail to enable those skilled in the art to practice the invention, and it is to be understood that other preferred embodiments may be utilized and that logical, mechanical and electrical changes may be made without departing from the spirit and scope of the present inventions. The following detailed description is, therefore, not to be taken in a limiting sense, and scope of the present inventions is defined only by the appended claims.
[0012]FIGS. 1A to 1D show the fabrication steps of a first preferred embodiment of the present invention. First, as shown in FIG. 1A, a photodiode region 16 and peripheral device regions 14 are formed in a semiconductor substrate (lay...
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A semiconductor device according to the present invention includes a semiconductor substrate: a photodiode responsive to a light, which is formed in the semiconductor substrate; at least an interlayer insulating layer formed over the semiconductor substrate, the at least an interlayer insulating layer comprising an upper most insulating layer; at least a conductive wiring layer, comprising an upper most conductive wiring layer formed on the upper most insulating layer; and a first passivation layer formed over the upper-most conductive wiring layer. The upper-most wiring layer is not formed directly above the photodiode. The first passivation layer is made of a permeability-resist material and is not formed directly above the photodiode.
Description
TECHNICAL FIELD OF THE INVENTION[0001]The present invention generally relates to a semiconductor device, and more particularly to a semiconductor device including a light sensor (photodiode) and to a method for fabricating the same.BACKGROUND OF THE INVENTION[0002]Conventionally, a passivation layer is formed over a semiconductor device to protect the semiconductor device from deterioration, physical damage and the like. Usually, such a passivation layer is made of silicon nitride and is formed by a plasma CVD process. A silicon nitride is a permeability-resist material, through which an ultraviolet light hardly passes. Therefore, a passivation layer of a silicon nitride is difficult to use for a semiconductor device including a photodiode, which operates in response to a light supplied from an external device.[0003]On the other hand, if a passivation layer having a high permeability is formed over the semiconductor device, a light may be entered into the semiconductor device from u...
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IPC IPC(8): H01L27/14
CPCH01L27/1462H01L27/14636H01L27/14685
Inventor HARA, KOUSUKE
Owner LAPIS SEMICON CO LTD