Method for molecular adhesion bonding with compensation for radial misalignment
a technology of molecular adhesion bonding and radial misalignment, which is applied in the field of multi-layer semiconductor wafers, can solve the problems of inability to compensate radial misalignment defects, inability to carry out corrections relating to radial misalignment, and inability to compensate by lithography
Active Publication Date: 2013-07-02
SONY SEMICON SOLUTIONS CORP
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Benefits of technology
This approach effectively compensates for radial misalignment, ensuring accurate alignment and interconnection of microcomponents, reducing offsets and enabling precise bonding of wafers with different radial expansions, thereby improving the quality of three-dimensional semiconductor structures.
Problems solved by technology
However, the alignment defects of the radial type cannot be compensated for by such repositioning of the wafers.
Moreover, when the production of the microcomponents involves a step of bonding between two wafers as is the case when producing three-dimensional structures, it is no longer possible to carry out corrections relating to the radial misalignment.
It is not in fact possible to compensate by lithography for the misalignments existing between the microcomponents of the two layers in this case.
Method used
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[0034]The present invention applies in general to the bonding by molecular adhesion between two wafers which have different radial expansions, leading to a radial misalignment between them after bonding.
[0035]The invention applies more particularly, but not exclusively, to the bonding by molecular adhesion between at least two wafers, each comprising components, in which at least some of the components of each of the wafers are intended to be aligned after bonding.
[0036]In order to compensate for the phenomenon of radial misalignment of the wafers after bonding, the present invention proposes to impose a bonding curvature, which has been defined beforehand as a function of the initial radial misalignment, on the wafers during their bonding.
[0037]More precisely, before bonding, each of the two wafers has its own curvature, which may be concave as in the case of the wafer 30 in FIG. 2 or convex as in the case of the wafer 40 in FIG. 3. This curvature determines the curvature deformati...
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Abstract
A method for bonding a first wafer on a second wafer by molecular adhesion, where the wafers have an initial radial misalignment between them. The method includes bringing the two wafers into contact so as to initiate the propagation of a bonding wave between the two wafers while a predefined bonding curvature is imposed on at least one of the two wafers during the contacting step as a function of the initial radial misalignment.
Description
FIELD OF THE INVENTION[0001]The present invention concerns the field of multilayer semiconductor wafers or structures produced according to the technology of three-dimensional integration (3D integration) which involves the transfer onto a first wafer, referred to as the final substrate, of at least one layer formed from a second wafer, this layer corresponding to the portion of the second wafer in which elements have been formed, for example a plurality of microcomponents, other corresponding elements also being formed in the first wafer.BACKGROUND OF THE INVENTION[0002]Particularly owing to the very small size and the large number of microcomponents present on a given layer, each transferred layer, that is to say each wafer comprising the layer, must be positioned on the final substrate (the first wafer on its own or already comprising other transferred layers) with great precision in order to comply with very strict alignment with the underlying layer. It may furthermore be neces...
Claims
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IPC IPC(8): B32B41/00B32B37/10
CPCH01L21/187H01L24/75H01L24/80H01L24/94H01L25/0657H01L25/50H01L21/185Y10T156/1092H01L2224/75702H01L2224/80357H01L2224/08146H01L2224/80006H01L2224/80895H01L2224/80896H01L2224/94H01L2224/75756H01L2224/80948H01L2924/3511Y10T156/1089Y10T156/10H01L2224/80H01L21/20B32B37/144B32B37/18B32B38/1808B32B38/1866B32B41/00H01L2224/75703H01L2224/75901B32B2041/04B32B2307/202B32B2457/14B32B2309/72
Inventor GAUDIN, GWELTAZ
Owner SONY SEMICON SOLUTIONS CORP